Zobrazeno 1 - 10
of 515
pro vyhledávání: '"Shur, Michael S"'
Autor:
Zhang, Yuhui, Shur, Michael S.
We show that a periodic multi-grated-gate structure can be applied to THz plasmonic FETs (TeraFETs) to improve the THz detection sensitivity. The introduction of spatial non-uniformity by separated gate sections creates regions with distinct carrier
Externí odkaz:
http://arxiv.org/abs/2302.09725
Publikováno v:
Journal of Applied Physics; 7/21/2024, Vol. 136 Issue 3, p1-9, 9p
Autor:
Zhang, Yuhui, Shur, Michael S.
A non-uniform capacitance profile in the channel of a THz field-effect transistor (TeraFET) could significantly improve the THz detection performance. The analytical solutions and simulations of the hydrodynamic equations for the exponentially varyin
Externí odkaz:
http://arxiv.org/abs/2108.12877
Autor:
Zhang, Yuhui, Shur, Michael S.
Publikováno v:
Journal of Applied Physics 129, 053102 (2021)
The terahertz detection performance and operating regimes of graphene plasmonic field-effect transistors (FETs) were investigated by a hydrodynamic model. Continuous wave detection simulations showed that the graphene response sensitivity is similar
Externí odkaz:
http://arxiv.org/abs/2012.11423
Autor:
Zhang, Yuhui, Shur, Michael S.
We report on the response characteristics of plasmonic terahertz field-effect transistors (TeraFETs) fed with femtosecond and picosecond pulses. Varying the pulse width (tpw) from 10-15 s to 10-10 s under a constant input power condition revealed two
Externí odkaz:
http://arxiv.org/abs/2009.09456
Autor:
Zhang, Yuhui, Shur, Michael S.
p-diamond field effect transistors (FETs) featuring large effective mass, long momentum relaxation time and high carrier mobility are a superb candidate for plasmonic terahertz (THz) applications. Previous studies have shown that p-diamond plasmonic
Externí odkaz:
http://arxiv.org/abs/2006.08460
Autor:
Liu, Xueqing, Shur, Michael S.
We present technology computer-aided design (TCAD) models for AlGaAs/InGaAs and AlGaN/GaN and silicon TeraFETs, plasmonic field effect transistors (FETs), for terahertz (THz) detection validated over a wide dynamic range. The modeling results are in
Externí odkaz:
http://arxiv.org/abs/1908.04845
Autor:
Ryzhii, Victor, Ryzhii, Maxim, Otsuji, Taiichi, Karasik, Valery E., Leiman, Vladimir G., Mitin, Vladimir, Shur, Michael S.
We propose and analyze the heterostructure comprising a black-arsenic-phosphorus layer (b-As$_{1-x}$P$_x$L) and a graphene layer (GL) integrated with a light-emitting diode (LED). The integrated b-As$_{1-x}$P$_x$L-GL-LED heterostructure can serve as
Externí odkaz:
http://arxiv.org/abs/1901.10755
Autor:
Ryzhii, Maxim, Ryzhii, Victor, Tang, Chao, Otsuji, Taiichi, Mitin, Vladimir, Shur, Michael S.
Publikováno v:
International Journal of High Speed Electronics & Systems; Dec2024, Vol. 33 Issue 4, p1-12, 12p