Zobrazeno 1 - 10
of 2 060
pro vyhledávání: '"Shur, M"'
The lateral interdigital array of the graphene microribbons (GMRs) on the h-BN substrate connected by narrow graphene nanoribbon (GNR) bridges serves as an efficient detector of terahertz (THz) radiation. The detection is enabled by the nonlinear GNR
Externí odkaz:
http://arxiv.org/abs/2409.15648
We analyze the operation of the hot-electron FET bolometers with the graphene channels (GCs) and the gate barrier layers (BLs). Such bolometers use the thermionic emission of the hot electrons heated by incident modulated THz radiation. The hot elect
Externí odkaz:
http://arxiv.org/abs/2403.06373
Publikováno v:
J. Appl. Phys. 135, 114503 (2024)
We analyze plasmonic oscillations in the coplanar graphene nanoribbon (GNR) structures induced by the applied terahertz (THz) signals and calculate the GNR impedance. The plasmonic oscillations in the CNR structures are associated with the electron a
Externí odkaz:
http://arxiv.org/abs/2402.03912
We propose and analyze the terahertz (THz) bolometric vector detectors based on the graphene-channel field-effect transistors (GC-FET) with the black-P gate barrier layer or with the composite b-BN/black-P/b-BN gate layer. The phase difference betwee
Externí odkaz:
http://arxiv.org/abs/2310.09741
We investigate the response of the micromechanical field-effect transistors (MMFETs) to the impinging terahertz (THz) signals. The MMFET uses the microcantilevers MC as a mechanically floating gate and the movable mirror of the Michelson optical inte
Externí odkaz:
http://arxiv.org/abs/2306.13318
We propose and analyze the performance of terahertz (THz) room-temperature bolometric detectors based on the graphene channel field-effect transistors (GC-FET). These detectors comprise the gate barrier layer (BL) composed of the lateral hexagonal-Bo
Externí odkaz:
http://arxiv.org/abs/2306.01975
Publikováno v:
Sci Rep 13, 9665 (2023)
We propose the terahertz (THz) detectors based on field-effect transistors (FETs) with the graphene channel (GC) and the black-Arsenic (b-As) black-Phosphorus (b-P), or black-Arsenic-Phosphorus (b-As$_x$P$_{1-x}$) gate barrier layer. The operation of
Externí odkaz:
http://arxiv.org/abs/2304.11635
We developed a theory of collective plasma oscillations in a dc current-biased field effect transistor with interdigitated dual grating gate and demonstrated a new mechanism of electron plasma instability in this structure. The instability in the pla
Externí odkaz:
http://arxiv.org/abs/2303.16152
Publikováno v:
Phys. Rev. Applied 19, 064033 (2023)
We analyze the two-dimensional electron gas (2DEG) heating by the incident terahertz (THz) radiation in the field-effect transistor (FET) structures with the graphene channels (GCs) and the black-phosphorus and black-arsenic gate barrier layers (BLs)
Externí odkaz:
http://arxiv.org/abs/2303.08492
Publikováno v:
J. Appl. Phys. 133, 174501 (2023)
We evaluate the terahertz (THz) detectors based on field effect transistor (FET) with the graphene channel {GC} and a floating metal gate (MG) separated from the GC by a black-phosphorus (b-P) or black-arsenic (b-As) barrier layer (BL). The operation
Externí odkaz:
http://arxiv.org/abs/2303.08488