Zobrazeno 1 - 2
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pro vyhledávání: '"Shuqin Duan"'
Publikováno v:
2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
This paper discussed the applications of electron energy loss spectroscopy (EELS) for element characterization in semiconductor manufacturing. The first experiment compared the ability of element chemical states analysis between EELS and X-ray photoe
Autor:
Zhen Xu, Beichao Zhang, Yipeng Jan, Jia Xu, Aodong He, Wanchun Ren, Shuqin Duan, Qinqin Yu, Zhitang Song, Yanghui Xiang, Xuezhen Jing, Feng Rao, Jiadong Ren, Li Jiang, Songlin Feng, Bo Liu
Publikováno v:
ECS Transactions. 60:533-538
Phase change memory (PCM) has been regarded as a promising candidate of the next generation nonvolatile memory. However, the application of PCM has been limited by the high power required to reset the device (changing from crystalline to amorphous st