Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Shuojin Hang"'
Publikováno v:
ACM Great Lakes Symposium on VLSI
This paper describes a simplified Arm processor for VLSI education. The processor implements an 8-bit datapath and a subset of the instructions so that it fits on a 1.5 x 1.5 mm MOSIS TinyChip in an ON Semiconductor 0.6 um process. During a sequence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6187e238cb07138b1d1dfbd576b360af
https://doi.org/10.1145/3386263.3406920
https://doi.org/10.1145/3386263.3406920
Publikováno v:
Carbon. 72:233-241
We performed spatial Raman mapping on supported monolayer graphene carved by 30 keV He + beam. A tilted beam was introduced to effectively eliminate the substrate swelling. The ratio between D and G peak intensities shows that Stage 1 and Stage 2 dis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cb796b129c525dc9f9e3e88024da3203
https://doi.org/10.1016/j.carbon.2014.01.071
https://doi.org/10.1016/j.carbon.2014.01.071
This paper investigates the behaviour of a defective single-gate bilayer graphene transistor. Point defects were introduced into pristine graphene crystal structure using a tightly focused helium ion beam. The transfer characteristics of the exposed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cf4bc423b601efacf3d811ddf45127c6
https://eprints.soton.ac.uk/405472/
https://eprints.soton.ac.uk/405472/
We investigated a method of forming tunnel barriers in monolayer graphene nanoribbon (GNR) using controlled ion irradiation. By using a helium ion microscope (HIM), we are able to reduce the width of exposure area down to 5nm. Source-drain conductanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4062f7b4f0352405b3ab559e408368b7
https://eprints.soton.ac.uk/366742/
https://eprints.soton.ac.uk/366742/
Publikováno v:
2014 Silicon Nanoelectronics Workshop (SNW).
We present results on electronic transport in disordered graphene nanowire field effect transistors. We show the emergence of unipolar transport where increasing defects density yield almost an insulating behaviour in n-type graphene whilst showing a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38f97fb803a527e8e79e220ea8d104f7
https://doi.org/10.1109/snw.2014.7348595
https://doi.org/10.1109/snw.2014.7348595
We report on systematic study of electronic transport in low-biased, disordered graphene nanowires. We reveal the emergence of unipolar transport as the defect concentration increases beyond 0.3\% where an almost insulating behaviour is observed on n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::79a0cab2dc74490ba416d2c861be4f95
Autor:
Zakaria Moktadir, Hiroshi Mizuta, Darren M. Bagnall, Nima Kalhor, Harvey N. Rutt, Stuart A. Boden, Shuojin Hang
Publikováno v:
SPIE Newsroom.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7dfbe25f773ced89e163c3b4342e7a6
https://doi.org/10.1117/2.1201302.004739
https://doi.org/10.1117/2.1201302.004739
Autor:
Hiroshi Mizuta, Shuojin Hang, K. Higashimine, Jamie D. Reynolds, Muruganathan Manoharan, Zakaria Moktadir
Publikováno v:
Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54aaab8fc8affc004ccbed27773d6c69
https://doi.org/10.7567/ssdm.2013.ps-13-20
https://doi.org/10.7567/ssdm.2013.ps-13-20
Autor:
Nobuo Otsuka, Darren M. Bagnall, Yoshishige Tsuchiya, Hiroshi Mizuta, Harold M. H. Chong, Stuart A. Boden, Dam Hieu Chi, Shuojin Hang, Harvey N. Rutt, Nima Kalhor, Nguyen Tien Cuong, Marek E. Schmidt, Zakaria Moktadir, Manoharan Muruganathan
In this paper we first present a new fabrication process of downscaled graphene nanodevices based on direct milling of graphene using an atomic-size helium ion beam. We address the issue of contamination caused by the electron-beam lithography proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7e755c00d02ab797bd7b7df7ff211b54
https://eprints.soton.ac.uk/367889/
https://eprints.soton.ac.uk/367889/