Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Shuoheng Shen"'
Publikováno v:
Journal of Functional Foods, Vol 86, Iss , Pp 104683- (2021)
Neurodegenerative diseases such as Alzheimer's disease are characterized by the progressive, irreversible degeneration of central nervous system structure and function. As the global population ages, an increasing number of patients are being diagnos
Externí odkaz:
https://doaj.org/article/9e33ad360adc421597be7423bc76d422
Autor:
Shuoheng Shen, Hua Tang, Yufeng Li, Feng Yun, Chenyu Hu, Qiang Li, Yunhe Bai, Qin Xiao, Qifan Zhang
Publikováno v:
Journal of Materials Research. 35:3247-3256
Continuous hBN films have been grown by means of a radio-frequency-sputtering technology, and their material properties have been investigated. The prepared hBN films can achieve good smoothness in a large area. The surface morphologies and compositi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::565b787971b7da9ddeab18eb215d1dd4
https://doi.org/10.1557/jmr.2020.315
https://doi.org/10.1557/jmr.2020.315
Publikováno v:
Journal of Functional Foods, Vol 86, Iss, Pp 104683-(2021)
Neurodegenerative diseases such as Alzheimer's disease are characterized by the progressive, irreversible degeneration of central nervous system structure and function. As the global population ages, an increasing number of patients are being diagnos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e1b7fde2e4cf0c814dbc4091e97857b3
http://www.sciencedirect.com/science/article/pii/S1756464621003327
http://www.sciencedirect.com/science/article/pii/S1756464621003327
Publikováno v:
ACS Applied Materials & Interfaces
This article reports a nonpolar GaN metal–semiconductor–metal (MSM) photodetector (PD) with an ultrahigh responsivity and an ultrafast response speed in the ultraviolet spectral region, which was fabricated on nonpolar (112̅0) GaN stripe arrays
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d120f66387f8d596c53ebceb8079b583
https://pubmed.ncbi.nlm.nih.gov/32374591
https://pubmed.ncbi.nlm.nih.gov/32374591
High‐quality semi‐polar (11‐22) GaN is obtained by means of growth on patterned (113) silicon substrates featured with stripy grooves and extra periodic gaps which are perpendicular to the grooves. Ga melting‐back during the GaN growth at a h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9b9d7d2ad7d98de6e4a0a77a138748cb
https://eprints.whiterose.ac.uk/159174/1/PSS-Bai-2.pdf
https://eprints.whiterose.ac.uk/159174/1/PSS-Bai-2.pdf
Autor:
Tao Wang, Peter Fletcher, Volkan Esendag, Peng Feng, Kean-Boon Lee, Sheng Jiang, Xuanming Zhao, Shuoheng Shen, Yuefei Cai
Publikováno v:
ACS Applied Materials & Interfaces
To fully exploit the advantages of GaN for electronic devices, a critical electric field which approaches its theoretical value (3 MV/cm) is desirable but has not yet been achieved. It is necessary to explore a new approach towards the intrinsic limi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::abc3e1e6b0f11663d2f4f30c5a8bbefd
https://eprints.whiterose.ac.uk/158040/8/acsami.9b19697.pdf
https://eprints.whiterose.ac.uk/158040/8/acsami.9b19697.pdf
A two-step approach has been developed for the growth of semi-polar (11–22) GaN on patterned (113) silicon substrates, which effectively eliminates Ga melt-back etching at a high temperature, one of the most challenging issues. A (113) Si substrate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d5c8a53470a6e13c6d93d23a7e4b905d
https://eprints.whiterose.ac.uk/159179/1/SST-Cai.pdf
https://eprints.whiterose.ac.uk/159179/1/SST-Cai.pdf
Publikováno v:
Physica Status Solidi (C); May2016, Vol. 13 Issue 5/6, p190-194, 5p