Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Shuoben Hou"'
Autor:
Shuoben Hou, Muhammad Shakir, Per-Erik Hellstrom, Bengt Gunnar Malm, Carl-Mikael Zetterling, Mikael Ostling
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 116-121 (2020)
An image sensor based on wide band gap silicon carbide (SiC) has the merits of high temperature operation and ultraviolet (UV) detection. To realize a SiC-based image sensor the challenge of opto-electronic on-chip integration of SiC photodetectors a
Externí odkaz:
https://doaj.org/article/37e6bee9a1fd4f1aa7450442ba24237a
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 139-145 (2018)
4H-SiC p-i-n photodiodes with various mesa areas (40 000 μm2, 2500 μm2, 1600 μm2, and 400 μm2) have been fabricated. Both C-V and I-V characteristics of the photodiodes have been measured at room temperature, 200 °C, 400 °C, and 500 °C. The ca
Externí odkaz:
https://doaj.org/article/7b6eff56f9434679a6a8a66d1260ac3e
Autor:
Muhammad Shakir, Alex Metreveli, Carl-Mikael Zetterling, Homer Alan Mantooth, Shuoben Hou, Arman Ur Rashid
Publikováno v:
IEEE Transactions on Electron Devices. 66:3734-3739
This paper reports an industry standard monolithic 555-timer circuit designed and fabricated in the in-house silicon carbide (SiC) low-voltage bipolar technology. This paper demonstrates the 555-timer integrated circuits (ICs) characterization in bot
Publikováno v:
Materials Science Forum. 963:818-822
This work presents the design, in-house fabrication, and electrical characterization of a monolithic medium scale integrated (MSI) D-type flip-flop (DFF). It consists of 65 n-p-n bipolar transistors and 49 integrated resistors. The monolithic bipolar
Publikováno v:
Materials Science Forum. 963:832-836
This paper presents our in-house fabricated 4H-SiC n-p-n phototransistors. The wafer mapping of the phototransistor on two wafers shows a mean maximum forward current gain (βFmax) of 100 at 25 °C. The phototransistor with the highest βFmax of 113
Publikováno v:
IEEE Electron Device Letters. 40:51-54
This letter presents the design, fabrication, and characterization of a 4H-SiC n-p-n bipolar junction transistor as a switch controlling an on-chip integrated p-i-n photodiode. The transistor and photodiode share the same epitaxial layers and topside
Autor:
Raheleh Hedayati, Muhammad Zeeshan Shakir, Mikael Östling, Shuoben Hou, Carl-Mikael Zetterling, B. Gunnar Malm
Publikováno v:
Electronics, Vol 8, Iss 5, p 496 (2019)
Electronics
Volume 8
Issue 5
Electronics
Volume 8
Issue 5
A Process Design Kit (PDK) has been developed to realize complex integrated circuits in Silicon Carbide (SiC) bipolar low-power technology. The PDK development process included basic device modeling, and design of gate library and parameterized cells
Publikováno v:
2019 Electron Devices Technology and Manufacturing Conference (EDTM).
Processing techniques for 4H-SiC devices and circuits are optimized. The SiC mesa etching process has a variation of $< 5$% over the wafer. The average n-type contact resistivity is $1.15 \times 10 ^{-6}$ Ohm. cm2. The fabricated devices and circuits
Publikováno v:
IEEE Electron Device Letters. 37:1594-1596
The p-i-n ultraviolet (UV) photodiodes based on 4H-SiC have been fabricated and characterized from room temperature (RT) to 550 °C. Due to bandgap narrowing at higher temperatures, the photocurrent of the photodiode increases by 9 times at 365 nm an
Publikováno v:
2017 75th Annual Device Research Conference (DRC).
Ultraviolet (UV) detection is important in astronomy, combustion detections and medical analysis. Solid-state UV detectors based on wide band gap semiconductors, such as 4H-SiC, are widely studied because of their excellent electrical properties [1].