Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Shuntaro Fujii"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 534-540 (2024)
The impacts of retrograde counter doping (RCD) profiles on low frequency noise (LFN) of buried channel (BC) PMOSFETs were investigated. RCD profiles were formed using heavy ion implantation. The RCD profile reduced LFN by more than 50%. The origin of
Externí odkaz:
https://doaj.org/article/29f75ae1e0c64eb4b15959a1ffdf7eeb
Publikováno v:
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::915f9b3834ed8fa6e9bd39610ade4598
https://doi.org/10.1109/edtm53872.2022.9798309
https://doi.org/10.1109/edtm53872.2022.9798309
Publikováno v:
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
This paper investigates the impact of channel percolation on low frequency noise (LFN). Using transient enhanced diffusion (TED) of channel dopants, the degree of channel percolation was changed. It was demonstrated that LFN in low drain current regi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98fee25f1e99709ddf22e782a6c18818
https://doi.org/10.1109/edtm50988.2021.9421039
https://doi.org/10.1109/edtm50988.2021.9421039
Autor:
Toshiro Sakamoto, Isao Maru, Shogo Katsuki, Atsushi Okamoto, Shohei Hamada, Soichi Morita, Tsutomu Miyazaki, Shuntaro Fujii, Tatsushi Yagi
Publikováno v:
IRPS
Fluorine (F) implantation into gate poly-Si was used to incorporate F atoms in gate oxide films. Different F profiles in depth direction of gate oxide films were prepared. Enhanced segregation of F atoms at SiO2/Si interfaces was important for improv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e81da4646d67526a1d10facb780f5125
https://doi.org/10.1109/irps46558.2021.9405217
https://doi.org/10.1109/irps46558.2021.9405217
Autor:
Hideki Takeuchi, Naoki Ishigami, Toshiro Sakamoto, Robert J. Mears, Atsushi Okamoto, Tsutomu Miyazaki, Shinji Kawaguchi, Shuntaro Fujii, Tatsushi Yagi, Hiu Yung Wong, Soichi Morita, Shohei Hamada, Shuji Ikeda
Publikováno v:
2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Steep retrograde doping devices were fabricated using undoped epitaxial Si channels with inserted oxygen layers. The effects of boron transient enhanced diffusion (TED) on threshold voltage (Vth) mismatch were investigated. Suppression of boron TED w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cc9e15bc652b1016f6a44661da1608e
https://doi.org/10.1109/ipfa49335.2020.9260584
https://doi.org/10.1109/ipfa49335.2020.9260584
Publikováno v:
IRPS
The effects of boron transient enhanced diffusion (TED) on channel size dependences of low frequency noise (LFN) in NMOSFETs were investigated. In case of wide gate width, as gate length became shorter, LFN characteristics were degraded by higher bor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f333b85e1ed74f27dffcca9c5f69ce36
https://doi.org/10.1109/irps.2019.8720585
https://doi.org/10.1109/irps.2019.8720585
Autor:
Yusuke Okuaki, Tsutomu Miyazaki, Toshiro Sakamoto, Shuntaro Fujii, Isao Maru, Tomohiko Chiaki, Tatsushi Yagi, Shohei Hamada, Atsushi Okamoto
Publikováno v:
2017 IEEE International Reliability Physics Symposium (IRPS).
The effects of boron transient enhanced diffusion (TED) on low frequency noise (LFN) in NMOSFETs have been experimentally investigated by focusing on reverse short channel characteristics and on boron re-distribution by interstitial Si atoms. For the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67cb522b6bf4af01d4975614714bc114
https://doi.org/10.1109/irps.2017.7936417
https://doi.org/10.1109/irps.2017.7936417
Publikováno v:
Japanese Journal of Applied Physics. 47:3046-3049
Randomly oriented polycrystalline silicon (poly-Si) thin films with a typical grain size of 20×2 µm2 grown by continuous-wave laser lateral crystallization (CLC) were obtained. It was found that CLC poly-Si thin films have a large tensile strain co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ea76f0c608c0a7aadb7a0652c30d5cb
https://doi.org/10.1143/jjap.47.3046
https://doi.org/10.1143/jjap.47.3046
Publikováno v:
Japanese Journal of Applied Physics. 46:2501-2504
The cw laser recrystallization of amorphous silicon (a-Si) thin films deposited on SiO2 films with Si(100) substrates was investigated by controlling irradiation conditions. The effects of the laser spot shape and laser-irradiated region overlap were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::36acfea11733e2e3efa509484479d351
https://doi.org/10.1143/jjap.46.2501
https://doi.org/10.1143/jjap.46.2501
Publikováno v:
Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd517dcbaddec998ab0713cc318e5b0b
https://doi.org/10.7567/ssdm.2011.j-5-4
https://doi.org/10.7567/ssdm.2011.j-5-4