Výsledky vyhledávání - "Shunta Yamahori"

Detection of Effect of Strain on the Valence Band Structure of SiGe by HXPES with High Spatial Resolution

Autor: Takuya Sakurai, Kentarou Sawano, Eiji Ikenaga, Shunta Yamahori, Eisuke Yonekura, Tomoya Sasago, Hiroshi Nohira

Publikováno v: ECS Transactions. 64:431-439

Since the aggressive scaling of the Si-based metal–oxide–semiconductor field effect transistors (MOSFET) is reaching its limits, the strained-Ge and III–V semiconductors are being studied extensively as one of the alternative channel materials

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f385990574adfabacddd806c79a993b1
https://doi.org/10.1149/06406.0431ecst

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Angle-Resolved Photoelectron Spectroscopy Studies of Initial Stage of Oxidation on C-Face 4H-SiC

Autor: Shunta Yamahori, Hiroshi Nohira, Tomoya Sasago

Publikováno v: ECS Transactions. 64:245-252

The practical use of power devices that use SiC has already been reported. However, performance of a SiC MOSFET has not reached the level predicted based on the physical properties of SiC. One of the reasons is that interface state density (Dit) at S

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8335d06915785ff6822607ae61b7eee2
https://doi.org/10.1149/06407.0245ecst

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