Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Shunta Murai"'
Publikováno v:
Journal of Electronic Materials. 51:1731-1739
The encapsulant-dependent effects of long-term low-temperature annealing on defects in Mg-ion-implanted GaN were investigated using metal-oxide-semiconductor (MOS) diodes. Annealing was carried out at 600 degrees C under nitrogen flow without or with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0f3cf40bdf71d20e17d2dc26664c3f3b
https://doi.org/10.1007/s11664-022-09431-y
https://doi.org/10.1007/s11664-022-09431-y
Publikováno v:
2019 Compound Semiconductor Week (CSW).
The impact of the dosage on electrical properties of Mg-ion-implanted GaN was investigated. To investigate the near-surface region, n-GaN $([\mathrm{Si}]\ =5\times 10^{17}\ \mathrm{cm}^{-3})$ MOS structures with the Mg-ion dosage of $1.5\times 10^{11
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e2a7b8e0b696f721b5e3c9b4837142f
https://doi.org/10.1109/iciprm.2019.8819158
https://doi.org/10.1109/iciprm.2019.8819158
Publikováno v:
Japanese Journal of Applied Physics (JJAP). 60(1):016502
Mg ions were implanted into Si-doped (5 × 1017 cm–3) n-GaN at a dose of 1.5 × 1011 or 1.5 × 1012 cm–2. MOS diodes were used to characterize the implanted GaN after 300 °C annealing for 3 h and after additional 500 °C annealing for 3 min. Alt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6a676f3186eda20dce4c6715184a200c
http://hdl.handle.net/2115/83719
http://hdl.handle.net/2115/83719
Autor:
Masamichi Akazawa, Ryo Kamoshida, Tetsuo Narita, Shunta Murai, Tetsu Kachi, Jun Suda, Masato Omori
Publikováno v:
physica status solidi (b). 257:1900367
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4457101cdac22d8720b44ab8f30285b
https://doi.org/10.1002/pssb.201900367
https://doi.org/10.1002/pssb.201900367