Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Shunsuke Shitakata"'
Autor:
Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori
Publikováno v:
IEEE Access, Vol 12, Pp 12458-12464 (2024)
This study investigated changes in low-frequency noise sources associated with short-channel bulk metal-oxide-semiconductor field-effect transistors (MOSFETs) by analyzing random telegraph noise (RTN) from 300 K down to 3 K. The power spectral densit
Externí odkaz:
https://doaj.org/article/86a0341b30734716b05676159ca3cc5b
Autor:
Hiroshi Oka, Takumi Inaba, Shunsuke Shitakata, Kimihiko Kato, Shota Iizuka, Hidehiro Asai, Hiroshi Fuketa, Takahiro Mori
Publikováno v:
IEEE Access, Vol 11, Pp 121567-121573 (2023)
This study investigates the origin of low-frequency (LF) 1/ $f$ noise in Si n-channel metal-oxide-semiconductor field-effect transistors (n-MOSFETs) under cryogenic operation. The fluctuation of the drain current increased with decreasing temperature
Externí odkaz:
https://doaj.org/article/85ccaad116e34e26a41e0f4a9d4dbb21
Autor:
Takumi Inaba, Yusuke Chiashi, Minoru Ogura, Hidehiro Asai, Hiroshi Fuketa, Hiroshi Oka, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Takahiro Mori
Publikováno v:
Applied Physics Express, Vol 17, Iss 7, p 074002 (2024)
Transfer learning was examined to predict current-voltage (I-V) characteristics of MOSFETs at cryogenic temperatures. An experimental dataset was obtained from approximately 800 silicon-on-insulator MOSFETs using an automated cryogenic wafer prober t
Externí odkaz:
https://doaj.org/article/0dec5a0c307843deb506f838df9417f0