Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Shunsaku Muraoka"'
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Autor:
Koji Katayama, Shunsaku Muraoka, Ryutaro Yasuhara, Mochida Reiji, Ono Takashi, Takumi Mikawa, Masayoshi Nakayama, Kazuyuki Kouno, Shinichi Yoneda, Hitoshi Suwa, Yasushi Gohou, Hayata Yuriko, Yukio Hayakawa
Publikováno v:
IRPS
We present reliability issues to be considered in neural network (NN) processors based on analog nonvolatile memories. We developed a reliability model of resistive random access memory (ReRAM). In this model, the properties of conductive filament co
Autor:
Zhiqiang Wei, Guo An Du, Yukio Hayakawa, Hideto Kotani, Takumi Mikawa, Stanley Pl Yeoh, Koichi Kawashima, Jiann Fu Chen, Masayoshi Nakamura, Shinichi Yoneda, Mars Hy Chen, Kazuyuki Kouno, Shunsaku Muraoka, Satoru Ito
Publikováno v:
2018 IEEE International Memory Workshop (IMW).
We have developed 40nm ReRAM for low-power embedded applications. Using resistive switching element process technologies and filament characterization methods to realize good switching characteristics, highly reliable 8M-bit 40nm ReRAM array characte
Autor:
Masashi Arita, Shunsaku Muraoka, Shinichi Yoneda, Satoru Ito, Atsushi Tsurumaki-Fukuchi, Yasuo Takahashi, Zhiqiang Wei
Publikováno v:
2018 IEEE International Memory Workshop (IMW).
The oxygen distributions in resistive random access memory (ReRAM) cells containing one-transistor-one-resistor (1T1R) and one-resistor (1R) arrays with Ta2O5/TaOx/TaOy structures that were fabricated using 40 nm complementary metal-oxide-semiconduct
Autor:
Koichi Kawashima, Zhiqiang Wei, Ryutaro Yasuhara, Yukio Hayakawa, Shinichi Yoneda, Satoru Ito, Atsushi Himeno, Takumi Mikawa, Shunsaku Muraoka
Publikováno v:
Japanese Journal of Applied Physics. 58:SBBB06
We have developed a 40 nm resistive random access memory (ReRAM) technology embedded in a foundry-standard CMOS process for low-power applications. Excellent reliability was achieved in 8 Mbit, 40 nm ReRAM: 100 k cycles and 10 year retention at 85 °
Autor:
Shunsaku Muraoka, Yukio Hayakawa, Ryotaro Yasuhara, Kawai Ken, Koji Katayama, Koji Eriguchi, Yoneda Shinichi, Zhiqiang Wei, Kazuhiko Shimakawa, Takumi Mikawa
Publikováno v:
2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
An analytic formula based on stochastic differential equation is successfully developed to describe intrinsic ReRAM variation. The formula is useful to predict scaled ReRAM memory window after retention, verified by testing 40 nm 2Mb memory array.
Autor:
Koji Katayama, Ryutaro Yasuhara, Takumi Mikawa, Zhiqiang Wei, Shunsaku Muraoka, Takeki Ninomiya
Publikováno v:
ISCAS
A quantitative 3D conductive filament model for ReRAM is developed based on a hopping percolation theory without any fitting parameter. According to the theory, the dimensions and oxygen vacancy concentration of the conductive filament are functions
Autor:
Ryotaro Azuma, Zhiqiang Wei, Ryutaro Yasuhara, Kazuhiko Shimakawa, Kouhei Tanabe, Akifumi Kawahara, Ken Kawai, Shunsaku Muraoka
Publikováno v:
ICICDT
Aostract is ReRAM mereasmgiy being developed for applications that require higher speeds and lower voltages than flash memory. We have found TaOx to have high performance and high reliability. However one of the phenomena observed in ReRAM is that ea
Autor:
Ryutaro Yasuhara, Koji Katayama, Shunsaku Muraoka, Zhiqiang Wei, Takeki Ninomiya, Takumi Mikawa
Publikováno v:
IEEE International Interconnect Technology Conference.
Taking advantage of electron hopping between oxygen vacancies in filaments, ReRAM switching is caused by oxygen vacancy migration. We have developed an oxygen diffusion retention model, based on this switching mechanism, for both typical bits and out
Autor:
Shunsaku Muraoka, Koji Katayama, Ryutaro Yasuhara, Takumi Mikawa, Zhiqiang Wei, Takeki Ninomiya
Publikováno v:
Japanese Journal of Applied Physics. 52:114201
The post-cycling data retention of filamentary operated resistive random access memory (ReRAM) can be improved by minimizing conductive filament expansion during pulse cycling. We find that filament size gradually grows with increasing pulse cycles d