Zobrazeno 1 - 10
of 427
pro vyhledávání: '"Shunri Oda"'
Publikováno v:
Nanomaterials, Vol 13, Iss 18, p 2594 (2023)
The 29th International Conference on Amorphous and Nanocrystalline Semiconductors served as a continuation of the biennial conference that has been held since 1965 [...]
Externí odkaz:
https://doaj.org/article/97df3930e74c4f8f8f3828e5f800af00
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 4, Iss 5, Pp 278-285 (2016)
Deformation potential (Dac), which is one of the most important parameters determining the rate of electron-acoustic phonon scattering, in Si around MOS interfaces is thoroughly studied with regard to the dependences on surface carrier densities, bac
Externí odkaz:
https://doaj.org/article/92ec9173069f4f109b42d662dfd266a8
Publikováno v:
Nanoscale Advances. 2:1465-1472
Ge-core/a-Si-shell nanowires were synthesized in three consecutive steps. Nominally undoped crystalline Ge nanowires were first grown using a vapor–liquid–solid growth mechanism, followed by gold catalyst removal in an etching solution and deposi
Autor:
Giles Allison, Seigo Tarucha, Noritaka Usami, Jun Yoneda, Shunri Oda, Tetsuo Kodera, Tomohiro Otsuka, Takashi Nakajima, Kenta Takeda, Matthieu R. Delbecq, Kohei M. Itoh, Yusuke Hoshi
Publikováno v:
npj Quantum Information, Vol 4, Iss 1, Pp 1-6 (2018)
npj Quantum Information
npj Quantum Information, Nature, 2018, 4 (1), pp.54 (2018). ⟨10.1038/s41534-018-0105-z⟩
npj Quantum Information
npj Quantum Information, Nature, 2018, 4 (1), pp.54 (2018). ⟨10.1038/s41534-018-0105-z⟩
Electron spins confined in quantum dots are an attractive system to realize high-fidelity qubits owing to their long coherence time. With the prolonged spin coherence time, however, the control fidelity can be limited by systematic errors rather than
Publikováno v:
Appl. Phys. Lett. 117
Physically defined silicon triple quantum dots (TQDs) are fabricated on a silicon-on-insulator substrate by dry-etching. The fabrication method enables us to realize a simple structure that does not require gates to create quantum dot confinement pot
Autor:
D. A. Williams, Yu Yamaoka, Naoki Shimatani, Aleksey D. Andreev, Shunri Oda, Tetsuo Kodera, Ryoichi Ishihara
Publikováno v:
Appl. Phys. Lett. 117
For future integration of a large number of qubits and complementary metal-oxide-semiconductor (CMOS) controllers, higher operation temperature of qubits is strongly desired. In this work, we fabricate p-channel silicon quantum dot (Si QD) devices on
Autor:
Shunri Oda, Seigo Tarucha, Kohei M. Itoh, Yusuke Hoshi, Giles Allison, Kenta Takeda, Jun Yoneda, Tetsuo Kodera, Noritaka Usami, Takumu Honda, M. R. Delbecq, Tomohiro Otsuka, Takashi Nakajima
Publikováno v:
Nature Nanotechnology. 13:102-106
Recent advances towards spin-based quantum computation have been primarily fuelled by elaborate isolation from noise sources, such as surrounding nuclear spins and spin-electric susceptibility, to extend spin coherence. In the meanwhile, addressable
Publikováno v:
IEEE Journal of the Electron Devices Society. 4:278-285
Deformation potential ( $D_{ac}$ ), which is one of the most important parameters determining the rate of electron–acoustic phonon scattering, in Si around MOS interfaces is thoroughly studied with regard to the dependences on surface carrier densi
Publikováno v:
Appl. Phys..
We report characterizations of two types of Si triple quantum dot (TQD) devices with charge sensors, with the aim of integrating spin qubits. The QDs of a single TQD device are connected in line to adjacent QD(s), while all QDs are tunnel-coupled to
Publikováno v:
Emerging Devices for Low-Power and High-Performance Nanosystems ISBN: 9780429458736
Emerging Devices for Low-Power and High-Performance Nanosystems
Emerging Devices for Low-Power and High-Performance Nanosystems
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce4dbfd6832a9bd9695d3b3a858a0f3a
https://doi.org/10.1201/9780429458736-6
https://doi.org/10.1201/9780429458736-6