Experimental Study on Deformation Potential ( ${D}_{{{ac}}}$ ) in MOSFETs: Demonstration of Increased ${D}_{{{ac}}}$ at MOS Interfaces and Its Impact on Electron Mobility

Autor: Teruyuki Ohashi, Takahisa Tanaka, Tsunaki Takahashi, Shunri Oda, Ken Uchida

Publikováno v: IEEE Journal of the Electron Devices Society, Vol 4, Iss 5, Pp 278-285 (2016)

Deformation potential (Dac), which is one of the most important parameters determining the rate of electron-acoustic phonon scattering, in Si around MOS interfaces is thoroughly studied with regard to the dependences on surface carrier densities, bac

Externí odkaz: https://doaj.org/article/92ec9173069f4f109b42d662dfd266a8

Temperature dependence of hole transport properties through physically defined silicon quantum dots

Autor: D. A. Williams, Yu Yamaoka, Naoki Shimatani, Aleksey D. Andreev, Shunri Oda, Tetsuo Kodera, Ryoichi Ishihara

Publikováno v: Appl. Phys. Lett. 117

For future integration of a large number of qubits and complementary metal-oxide-semiconductor (CMOS) controllers, higher operation temperature of qubits is strongly desired. In this work, we fabricate p-channel silicon quantum dot (Si QD) devices on

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a698ae4fb6c4f416f8cfda9e35450f11
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100833703

Optimized electrical control of a Si/SiGe spin qubit in the presence of an induced frequency shift

Autor: Giles Allison, Seigo Tarucha, Noritaka Usami, Jun Yoneda, Shunri Oda, Tetsuo Kodera, Tomohiro Otsuka, Takashi Nakajima, Kenta Takeda, Matthieu R. Delbecq, Kohei M. Itoh, Yusuke Hoshi

Publikováno v: npj Quantum Information, Vol 4, Iss 1, Pp 1-6 (2018)
npj Quantum Information
npj Quantum Information, Nature, 2018, 4 (1), pp.54 (2018). ⟨10.1038/s41534-018-0105-z⟩

Electron spins confined in quantum dots are an attractive system to realize high-fidelity qubits owing to their long coherence time. With the prolonged spin coherence time, however, the control fidelity can be limited by systematic errors rather than

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dba8b7d8cec1ecb1c5defa5c0ce69bd0
http://link.springer.com/article/10.1038/s41534-018-0105-z

Physically defined triple quantum dot systems in silicon on insulator

Autor: Tetsuo Kodera, Shunri Oda, Raisei Mizokuchi

Publikováno v: Appl. Phys..

We report characterizations of two types of Si triple quantum dot (TQD) devices with charge sensors, with the aim of integrating spin qubits. The QDs of a single TQD device are connected in line to adjacent QD(s), while all QDs are tunnel-coupled to

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::da7c2daa90f58054298be5473928fe7a
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100818652

Deionization of Dopants in Silicon Nanofilms Even with Donor Concentration of Greater than 1019 cm–3

Autor: Naotoshi Kadotani, Takahisa Tanaka, Shunri Oda, Tsunaki Takahashi, Yuya Kurosawa, Ken Uchida

Publikováno v: Nano Letters. 16:1143-1149

Understanding the dopant properties in heavily doped nanoscale semiconductors is essential to design nanoscale devices. We report the deionization or finite ionization energy of dopants in silicon (Si) nanofilms with dopant concentration (ND) of grea

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::045d92510616ca3aab1f344b06e31dd9
https://doi.org/10.1021/acs.nanolett.5b04406