Experimental Study on Deformation Potential ( ${D}_{{{ac}}}$ ) in MOSFETs: Demonstration of Increased ${D}_{{{ac}}}$ at MOS Interfaces and Its Impact on Electron Mobility

Autor: Teruyuki Ohashi, Takahisa Tanaka, Tsunaki Takahashi, Shunri Oda, Ken Uchida

Publikováno v: IEEE Journal of the Electron Devices Society, Vol 4, Iss 5, Pp 278-285 (2016)

Deformation potential (Dac), which is one of the most important parameters determining the rate of electron-acoustic phonon scattering, in Si around MOS interfaces is thoroughly studied with regard to the dependences on surface carrier densities, bac

Externí odkaz: https://doaj.org/article/92ec9173069f4f109b42d662dfd266a8

Temperature dependence of hole transport properties through physically defined silicon quantum dots

Autor: D. A. Williams, Yu Yamaoka, Naoki Shimatani, Aleksey D. Andreev, Shunri Oda, Tetsuo Kodera, Ryoichi Ishihara

Publikováno v: Appl. Phys. Lett. 117

For future integration of a large number of qubits and complementary metal-oxide-semiconductor (CMOS) controllers, higher operation temperature of qubits is strongly desired. In this work, we fabricate p-channel silicon quantum dot (Si QD) devices on

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a698ae4fb6c4f416f8cfda9e35450f11
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100833703

Optimized electrical control of a Si/SiGe spin qubit in the presence of an induced frequency shift

Autor: Giles Allison, Seigo Tarucha, Noritaka Usami, Jun Yoneda, Shunri Oda, Tetsuo Kodera, Tomohiro Otsuka, Takashi Nakajima, Kenta Takeda, Matthieu R. Delbecq, Kohei M. Itoh, Yusuke Hoshi

Publikováno v: npj Quantum Information, Vol 4, Iss 1, Pp 1-6 (2018)
npj Quantum Information
npj Quantum Information, Nature, 2018, 4 (1), pp.54 (2018). ⟨10.1038/s41534-018-0105-z⟩

Electron spins confined in quantum dots are an attractive system to realize high-fidelity qubits owing to their long coherence time. With the prolonged spin coherence time, however, the control fidelity can be limited by systematic errors rather than

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dba8b7d8cec1ecb1c5defa5c0ce69bd0
http://link.springer.com/article/10.1038/s41534-018-0105-z

Physically defined triple quantum dot systems in silicon on insulator

Autor: Tetsuo Kodera, Shunri Oda, Raisei Mizokuchi

Publikováno v: Appl. Phys..

We report characterizations of two types of Si triple quantum dot (TQD) devices with charge sensors, with the aim of integrating spin qubits. The QDs of a single TQD device are connected in line to adjacent QD(s), while all QDs are tunnel-coupled to

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::da7c2daa90f58054298be5473928fe7a
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100818652

Transfer printing of gate dielectric and carrier doping with poly(vinyl-alcohol) coating to fabricate top-gate molybdenum disulfide field-effect transistors

Autor: Shunri Oda, Takahiro Matsuzaki, Takamasa Kawanago

Publikováno v: Japanese Journal of Applied Physics. 59:120903

This study reposts the fabrication of top-gate molybdenum disulfide (MoS2) field-effect transistor (FET) by the transfer printing of a gate dielectric in conjunction with a poly(vinyl-alcohol) (PVA) coating for carrier doping. The spin-coated PVA fil

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9974dbe8433fa9aa7837fc7147b84995
https://doi.org/10.35848/1347-4065/abc6be