Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Shunqiang Xu"'
Publikováno v:
Geodesy and Geodynamics, Vol 10, Iss 5, Pp 347-355 (2019)
The 1:200,000 middle-large scale Bouguer gravity anomaly data covering the southern segment of the Liaocheng-Lankao fault (SLLF) and its vicinity are analyzed with two methods. First, the Bouguer gravity anomaly data are decomposed by two-dimensional
Externí odkaz:
https://doaj.org/article/0b2e244ab74d475d9f94d9095448d0ce
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 67:4566-4579
A fully integrated passive ultrahigh-frequency (UHF) RF identification (RFID) tag integrated circuit (IC) based on Chinese UHF RFID standard (GJB 7377.1) is proposed. An optimized voltage multiplier with threshold compensation and leakage current sup
Publikováno v:
Geodesy and Geodynamics, Vol 10, Iss 5, Pp 347-355 (2019)
The 1:200,000 middle-large scale Bouguer gravity anomaly data covering the southern segment of the Liaocheng-Lankao fault (SLLF) and its vicinity are analyzed with two methods. First, the Bouguer gravity anomaly data are decomposed by two-dimensional
Publikováno v:
Microelectronics Reliability. :169-172
A new multitime programmable (MTP) non-volatile memory (NVM) cell using high voltage NMOS is proposed. A PMOS transistor is used for programming, erasing, and reading, and a high voltage NMOS is used for selecting the memory cell. The memory cell has
Publikováno v:
2017 International Conference on Computer Systems, Electronics and Control (ICCSEC).
The anti-collision algorithm is very important for the Radio-Frequency Identification (RFID) system. For the various possible algorithms, hybrid algorithm has the best performance because it combines the ideas of binary tree with frame-slotted ALOHA.
Publikováno v:
ASICON
A novel reading scheme for the multitime programmable (MTP) memory cells is presented in this paper. The proposed scheme performs reading operation on the control transistor, and the cell's threshold voltage is defined relative to the tunneling gate.
Publikováno v:
NVMTS
In this paper, a mechanism using drain-floated new MOS capacitor (NCAP) is proposed to improve the erase efficiency for the single poly embedded Flash memory. By floating the source/drain junctions of PMOS and new NCAP, we observe significant increas
Publikováno v:
IEICE Electronics Express. 14:20170565-20170565