Zobrazeno 1 - 10
of 327
pro vyhledávání: '"Shunpei Yamazaki"'
Autor:
Mayumi Mikami, Jo Saito, Teruaki Ochiai, Masahiro Takahashi, Tatsuyoshi Takahashi, Yohei Momma, Kazutaka Kuriki, Rihito Wada, Kazune Yokomizo, Genki Kobayashi, Shinichi Komaba, Shunpei Yamazaki
Publikováno v:
Communications Materials, Vol 5, Iss 1, Pp 1-11 (2024)
Abstract LiCoO2 is a historic lithium-ion battery cathode that continues to be used today because of its high energy density. However, the practical capacity of LiCoO2 is limited owing to the harmful phase transition at high voltages, which prevents
Externí odkaz:
https://doaj.org/article/65188db8b5f1446f87a887c68e6e18de
Autor:
Kouhei Toyotaka, Yuto Yakubo, Kazuma Furutani, Haruki Katagiri, Masashi Fujita, Yoshinori Ando, Toru Nakura, Shunpei Yamazaki
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 486-494 (2024)
Using a 3-D monolithic stacking memory technology of crystalline oxide semiconductor (OS) transistors, we fabricated a test chip having AI accelerator (ACC) memory for weight data of a neural network (NN), backup memory of flip-flops (FF), and CPU me
Externí odkaz:
https://doaj.org/article/4442c6379e414681ae1cfd2d32125415
Autor:
Takeya Hirose, Yuki Okamoto, Yusuke Komura, Toshiki Mizuguchi, Toshihiko Saito, Minato Ito, Kiyotaka Kimura, Hiroki Inoue, Tatsuya Onuki, Yoshinori Ando, Hiromi Sawai, Tsutomu Murakawa, Hitoshi Kunitake, Hajime Kimura, Takanori Matsuzaki, Makoto Ikeda, Shunpei Yamazaki
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 236-242 (2024)
We present a three-dimensional (3D) DRAM prototype, which is formed using oxide semiconductor FETs (OSFETs) monolithically stacked on a Si CMOS. The OSFETs are composed of a one-layer planar FET and two-layer vertical FETs (VFETs). The 1T1C memory ce
Externí odkaz:
https://doaj.org/article/936c403535f14b428f2a5a71bfb5a0ef
Autor:
Munehiro Kozuma, Yusuke Komura, Shoki Miyata, Yuki Okamoto, Yuki Tamatsukuri, Hiroki Inoue, Toshihiko Saito, Hidetomo Kobayashi, Tatsuya Onuki, Yuichi Yanagisawa, Toshihiko Takeuchi, Yutaka Okazaki, Hitoshi Kunitake, Daiki Nakamura, Takaaki Nagata, Yasumasa Yamane, Makoto Ikeda, Shunpei Yamazaki
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 187-194 (2024)
We developed an organic light-emitting diode (OLED)/oxide semiconductor (OS)/silicon (Si) display in which Si CMOS display drivers can be arranged two-dimensionally by monolithically stacking ${c}$ -axis-aligned crystalline oxide semiconductor (CAAC-
Externí odkaz:
https://doaj.org/article/7301f291d1704b3fb5931c96fe984c7b
Autor:
Naomi Yazaki, Ryosuke Motoyoshi, Shiyu Numata, Kazuaki Ohshima, Yuji Egi, Fumito Isaka, Toshikazu Ohno, Sachiaki Tezuka, Toshiki Hamada, Kazuma Furutani, Kazuki Tsuda, Takanori Matsuzaki, Tatsuya Onuki, Tsutomu Murakawa, Hitoshi Kunitake, Masaharu Kobayashi, Shunpei Yamazaki
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 467-472 (2023)
Aiming to reduce the area of a ferroelectric random access memory (FeRAM), we fabricated an FeRAM having a 1T1C configuration by using a ${c}$ -axis aligned crystalline In-Ga-Zn-O field-effect transistor, which we call OSFET, with a high breakdown vo
Externí odkaz:
https://doaj.org/article/130a499579cf486f97ff60e88658e798
Autor:
Hitoshi Kunitake, Kazuaki Ohshima, Kazuki Tsuda, Noriko Matsumoto, Tatsuki Koshida, Satoru Ohshita, Hiromi Sawai, Yuichi Yanagisawa, Shiori Saga, Ryo Arasawa, Takako Seki, Ryunosuke Honda, Haruyuki Baba, Daigo Shimada, Hajime Kimura, Ryo Tokumaru, Tomoaki Atsumi, Kiyoshi Kato, Shunpei Yamazaki
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 495-502 (2019)
We fabricated a field-effect transistor (FET) with a gate length of 21 nm whose channel material is a c-axis-aligned crystalline In-Ga-Zn oxide (CAAC-IGZO). A CAAC-IGZO FET with a gate length of 21 nm has an extremely low off-state leakage current, a
Externí odkaz:
https://doaj.org/article/3b4a197508f54d028b2b33ddeb7df132
Autor:
Kiyoshi Kato, Hidetomo Kobayashi, Hideaki Shishido, Toshiyuki Isa, Tomoya Aoyama, Yasuhiro Jimbo, Ryota Hodo, Koji Kusunoki, Hitoshi Kunitake, Shunpei Yamazaki
Publikováno v:
Journal of the Society for Information Display. 30:690-698
Autor:
Kiyotaka Kimura, Yuki Tamatsukuri, Hideaki Shishido, Hidetomo Kobayashi, Toshiyuki Isa, Toshihiko Takeuchi, Hitoshi Kunitake, Haijme Kimura, Shunpei Yamazaki
Publikováno v:
SID Symposium Digest of Technical Papers. 53:1059-1062
Autor:
Toshihiko Saito, Toshiki Mizuguchi, Yuki Okamoto, Minato Ito, Kouhei Toyotaka, Munehiro Kozuma, Takanori Matsuzaki, Hidetomo Kobayashi, Tatsuya Onuki, Yoshikazu Hiura, Ryota Hodo, Shinya Sasagawa, Hitoshi Kunitake, Daiki Nakamura, Hitomi Sato, Hajime Kimura, Chih-Chiang Wu, Hiroshi Yoshida, Min-Cheng Chen, Ming-Han Liao, Shou-Zen Chang, Shunpei Yamazaki
Publikováno v:
SID Symposium Digest of Technical Papers. 53:94-97
Autor:
Kazuki Tsuda, Hironobu Takahashi, Toshiki Hamada, Satoru Saito, Haruyuki Baba, Masahiro Takahashi, Toshimitsu Obonai, Junichi Koezuka, Hitoshi Kunitake, Daisuke Kobayashi, Michio Tajima, Shunpei Yamazaki
Publikováno v:
SID Symposium Digest of Technical Papers. 53:78-81