Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Shunko Magoshi"'
Autor:
Koji Murano, Machiko Suenaga, Kosuke Takai, Shunko Magoshi, Mitsuru Kondo, Ryu Komatsu, Yoshinori Kagawa, Hideaki Sakurai, Shingo Kanamitsu, Hikaru Sasaki
Publikováno v:
Photomask Japan 2021: XXVII Symposium on Photomask and Next-Generation Lithography Mask Technology.
Nanoimprint lithography (NIL) is a promising technology on next generation lithography for the fabrication of semiconductor devices. NIL is a one-to-one lithographic technology with a contact transfer methodology using templates. Therefore, critical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df9538e5485b92e023837bda46c4e346
https://doi.org/10.1117/12.2603907
https://doi.org/10.1117/12.2603907
Autor:
Shunko Magoshi, Satoshi Tanaka, Susumu Iida, Takashi Kamo, Takayuki Uchiyama, Yasutaka Morikawa, Takeshi Yamane
Publikováno v:
Extreme Ultraviolet (EUV) Lithography X.
We report on the reduction of the mask 3D effect in an etched 40-pair multilayer extreme ultraviolet (EUV) lithography mask by measuring the printed ΔCD (horizontal–vertical) on exposure with a high-NA small field exposure tool (HSFET). We compare
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c087f180a3305c18a54f40ce7922141
https://doi.org/10.1117/12.2515273
https://doi.org/10.1117/12.2515273
Autor:
Takashi Kamo, Takeshi Yamane, Yasutaka Morikawa, Susumu Iida, Takayuki Uchiyama, Shunko Magoshi, Satoshi Tanaka
Publikováno v:
Proceedings of SPIE; 1/20/2019, Vol. 10957, p109571C-1-109571C-6, 6p
Publikováno v:
Japanese Journal of Applied Physics. 47:4866-4871
The small-field exposure tool (SFET) for extreme ultraviolet (EUV) lithography was manufactured by Canon and EUVA and installed in Selete. It is being used for developing mask, resist, and tool technologies. In this paper, we review the current statu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2efd6c233f2c7967e25482e43fd4a3c1
https://doi.org/10.1143/jjap.47.4866
https://doi.org/10.1143/jjap.47.4866
Autor:
Yuusuke Tanaka, Seiichiro Shirai, Kazuo Tawarayama, Shunko Magoshi, Kentaro Matsunaga, Hiroyuki Tanaka
Publikováno v:
SPIE Proceedings.
A high-resolution EUV exposure tool is needed to facilitate the development of EUV resists and masks. Since the EUV small-field exposure tool (SFET) has a high numerical aperture (NA = 0.3), low aberration & flare, and excellent stage stability, it s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::425f69bc1f15e179f819c3e8ad6a2e3e
https://doi.org/10.1117/12.870332
https://doi.org/10.1117/12.870332
Autor:
Yumi Nakajima, Kazuo Tawarayama, Kentaro Matsunaga, Hajime Aoyama, Satoshi Tanaka, Suigen Kyoh, Shunko Magoshi, Yumi Hayashi, Ichiro Mori
Publikováno v:
SPIE Proceedings.
Due to the promising development status of EUVL as a practical lithography technology for the 2x-nm node, we are continuing to evaluate its process liability using the EUV1 at Selete, which has an Off-Axis illumination capability. The resolution limi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e5fef8821d1022cb30c3f7a17beb94e
https://doi.org/10.1117/12.879333
https://doi.org/10.1117/12.879333
Autor:
Kosuke Takai, Yukiko Kikuchi, Yukiyasu Arisawa, Taiga Uno, Yumi Hayashi, Ichiro Mori, Hajime Aoyama, Suigen Kyoh, Shunko Magoshi, Kazuo Tawarayama, Ryoichi Inanami, Koji Murano, Ayumi Kobiki, Satoshi Tanaka, Yumi Nakajima, Daisuke Kawamura, Kentaro Matsunaga
Publikováno v:
SPIE Proceedings.
Extreme ultraviolet lithography (EUVL) is the most promising candidate for the manufacture of devices with a half pitch of 32 nm and beyond. We are now evaluating the process liability of EUVL in view of the current status of lithography technology d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::957d76daae21bcfb3de483952ff2d72b
https://doi.org/10.1117/12.846265
https://doi.org/10.1117/12.846265
Autor:
Yukiyasu Arisawa, Noriaki Oda, Ichiro Mori, Shunko Magoshi, Yuusuke Tanaka, Naofumi Nakamura, Kentaro Matsunaga, Daisuke Kawamura, Kazuo Tawarayama, Shuichi Saito, Hiroyuki Tanaka, Hajime Aoyama, Takashi Kamo, Taiga Uno, Eiichi Soda
Publikováno v:
SPIE Proceedings.
In the fabrication of interconnect test chips with a half pitch of 35 nm, we used an EUV full-field scanner (EUV1) for three critical layers: Metal 1, Via 1 and Metal 2. In this study, we focused on the Via-1 layer and investigated the printing chara
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93078233961e94a96192c32391b8efad
https://doi.org/10.1117/12.846315
https://doi.org/10.1117/12.846315
Autor:
Yuusuke Tanaka, Kazuo Tawarayama, Shunko Magoshi, Hajime Aoyama, Hiroyuki Tanaka, Seiichiro Shirai
Publikováno v:
Alternative Lithographic Technologies.
The Selete full-field EUV exposure tool, the EUV1, was manufactured by Nikon and is being set up at Selete. Its lithographic performance was evaluated in exposure experiments with a static slit using line-&-space (L&S) patterns, Selete Standard Resis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b02b2c1954f0c0bd58c457f03013069a
https://doi.org/10.1117/12.813627
https://doi.org/10.1117/12.813627
Autor:
Yuusuke Tanaka, Kazuo Tawarayama, Shunko Magoshi, Seiichiro Shirai, Hajime Aoyama, Hiroyuki Tanaka
Publikováno v:
Alternative Lithographic Technologies.
Since the k 1 factor is much larger in extreme-ultraviolet lithography (EUVL) than in optical lithography, optical proximity correction (OPC) should be much simpler for patterns on EUVL masks than for those on advanced photomasks. This will facilitat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::302ca868a4c87c727beea37364107a49
https://doi.org/10.1117/12.813492
https://doi.org/10.1117/12.813492