Zobrazeno 1 - 10
of 94
pro vyhledávání: '"Shunji Ozaki"'
Autor:
Shunji Ozaki, Yuki Nakahata
Publikováno v:
Advanced Engineering Forum. 38:3-9
Gallium oxide (Ga2O3) nanowires were grown on fused quartz and Si substrates by a vapor transport method of heating gallium metal at 750−1100 °C in a tube of the horizontal furnace. The obtained white colored product has shown to be the Ga2O3 nano
Autor:
Shunji Ozaki, Shingo Mukada
Publikováno v:
Advanced Engineering Forum. 38:10-16
Optical absorption and photoluminescence (PL) spectra were measured on defect-stannite-type semiconductor ZnGa2Se4 at temperatures T from 11 to 300 K. The square of the absorption coefficient spectra showed distinct two absorption edges, which were E
Autor:
Shunji Ozaki, Kazuya Matsumoto
Publikováno v:
Journal of Physics and Chemistry of Solids. 127:115-118
ZnSe nanowires were grown on fused quartz substrates by a vapor transport method in which the ZnSe powder is heated at 1100 °C in a tube of the furnace. The scanning electron microscopy images showed that the nanowires have the average diameter of
Autor:
Kazuya Matsumoto, Shunji Ozaki
Publikováno v:
Key Engineering Materials. 790:55-59
Zinc selenide (ZnSe) nanowires were grown on Si and fused quartz substrates by a simple vapor transport method of heating the ZnSe powder at 1100 °C in a tube of the furnace. The obtained yellow colored product has indicated to be the high density o
Autor:
Shunji Ozaki, Yoshimichi Horikoshi
Publikováno v:
Journal of Applied Physics; 2014, Vol. 115 Issue 5, p1-6, 6p
Publikováno v:
physica status solidi c. 12:717-720
Optical properties of the quaternary Cu2ZnSnS4 semiconductor have been studied by optical absorption, photoluminescence, photoreflectance, and thermoreflectance measurements. Optical absorption measurements suggest that Cu2ZnSnS4 is a direct-gap semi
Autor:
Shunji Ozaki1 ozaki@el.gunma-u.ac.jp, Yoshimichi Horikoshi1
Publikováno v:
Journal of Applied Physics. 2014, Vol. 115 Issue 5, p1-6. 6p.
Autor:
Kouichi Morozumi, Shunji Ozaki
Publikováno v:
Key Engineering Materials. 596:121-125
Zinc oxide (ZnO) nanowires were grown on Si substrates by a simple vapor transport method of heating the mixture of ZnO and carbon powders at 1100 °C in a tube of the furnace. The obtained large-quantity cotton-like product has indicated to be the h
Autor:
Yuto Hakamada, Shunji Ozaki
Publikováno v:
Key Engineering Materials. 534:141-145
SiOx nanowires were grown on Si substrates by a simple vapor transport method of heating the mixture of silicon monoxide and carbon powders at 1000 °C in a tube of the furnace. The dependence of the growth velocity on the growth temperature and on t
Autor:
Toru Namba, Shunji Ozaki
Publikováno v:
physica status solidi c. 9:2403-2406
Optical properties of a kesterite-type semiconductor Cu2ZnSnSe4 have been studied by optical absorption, spectroscopic ellipsometry, and thermoreflectance measurements. Optical absorption measurements suggest that Cu2ZnSnSe4 is a direct-gap semicondu