Zobrazeno 1 - 10
of 155
pro vyhledávání: '"Shun-ichiro OHMI"'
Publikováno v:
IEICE Transactions on Electronics. :578-583
Publikováno v:
IEICE Transactions on Electronics. :589-595
Publikováno v:
IEICE Transactions on Electronics. :584-588
Publikováno v:
2022 International Symposium on Semiconductor Manufacturing (ISSM).
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 34:323-327
We investigated the reduction of equivalent oxide thickness (EOT) of the in-situ formed Hf-based metal/oxide/nitride/oxide/silicon (MONOS) structure nonvolatile memory (NVM) device utilizing the HfON tunneling layer (TL). In case of the HfO2 TL, the
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 34:328-332
Metal-insulator-semiconductor field-effect transistors (MISFETs) with high-k HfNx multilayer gate dielectrics fabricated with Si surface flattening process were investigated. The Si surface flattening process was carried out by Ar/1.0%H2 annealing fo
Publikováno v:
Materials Science in Semiconductor Processing. 158:107386
Publikováno v:
MRS Advances. 6:259-263
In this paper, we investigated the effect of post metallization annealing (PMA) to improve the device characteristics of metal-ferroelectrics-Si field-effect transistor (MFSFET) with ferroelectric nondoped HfO2 formed by the Ar/O2-plasma reactive spu
Publikováno v:
IEEE Transactions on Electron Devices. 68:2427-2433
We have investigated the effects of the Kr/O2-plasma reactive sputtering on the nondoped HfO2 thin-film formation for ferroelectric gate metal-ferroelectrics-Si field-effect transistor (MFSFET). The remnant polarization was increased while the coerci
Autor:
Shun-ichiro Ohmi, Jooyoung Pyo
Publikováno v:
Materials Science Forum. 1016:1065-1070
In this paper, we have investigated the threshold voltage (VTH) control of metal-oxide-nitride-oxide-Si (MONOS) nonvolatile memory (NVM) with high-k HfN/HfO2 stacked layers for analog memory application. The Si surface atomically flattening was found