Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Shun-Chang Liu"'
Autor:
Shun-Chang Liu, Chen-Min Dai, Yimeng Min, Yi Hou, Andrew H. Proppe, Ying Zhou, Chao Chen, Shiyou Chen, Jiang Tang, Ding-Jiang Xue, Edward H. Sargent, Jin-Song Hu
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-7 (2021)
Perovskite-like antibonding VBM electronic structure is predicted to result in defect-tolerant materials. Here, the authors investigate GeSe with antibonding VBM from Ge 4s-Se 4p coupling, and a certified 5.2% PCE is obtained with high stability due
Externí odkaz:
https://doaj.org/article/3ad65eaaf90b4172afb09d09ff7c123a
Autor:
Ding-Jiang Xue, Yi Hou, Shun-Chang Liu, Mingyang Wei, Bin Chen, Ziru Huang, Zongbao Li, Bin Sun, Andrew H. Proppe, Yitong Dong, Makhsud I. Saidaminov, Shana O. Kelley, Jin-Song Hu, Edward H. Sargent
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-8 (2020)
Remnant tensile strain in the perovskite films induced in the thermal annealing step is a known source of material and device instabilities. Here Xue et al. use a thermal expandable hole transporting layer to compensate the strain and result in most
Externí odkaz:
https://doaj.org/article/50ece9c074ed4dbbadeadac74548d3ea
Autor:
Zongbao Li, Mingjie Feng, Shun-Chang Liu, Bin Yan, Ding-Jiang Xue, Xinsheng Liu, Hui-Juan Yan, Xia Wang
Publikováno v:
The Journal of Physical Chemistry Letters. 12:10249-10254
GeSe is an emerging promising light-harvesting material for photovoltaics due to its excellent optoelectronic properties, nontoxic and earth-abundant constituents, and high stability. In particular, perovskite-like antibonding states at the valence b
Publikováno v:
Nano Research. 15:1013-1019
Interlayer coupling as a unique feature for two-dimensional (2D) materials may influence their thickness-dependent physical properties, especially the bandgap due to quantum confinement effect. Widely-studied 2D materials usually possess strong inter
Autor:
Mingjie Feng, Shun-Chang Liu, Jinpeng Wu, Jin-Song Hu, Zongbao Li, Ding-Jiang Xue, Xing Zhang
Publikováno v:
Science China Materials. 64:2118-2126
Germanium monoselenide (GeSe) is an emerging promising photovoltaic absorber material due to its attractive optoelectronic properties as well as non-toxic and earth-abundant constitutes. However, all previously reported GeSe solar cells rely on a sup
Publikováno v:
Chemical Communications. 57:565-575
In-plane anisotropic two-dimensional (2D) materials possess unique in-plane anisotropic physical properties arising from their low crystal lattice symmetry. Among these low-symmetry 2D materials, anisotropic Ge-based binary materials have the advanta
Autor:
Mingjie Feng, Shun-Chang Liu, Ding-Jiang Xue, Wenbo Lu, Shumu Li, Zongbao Li, Jin-Song Hu, Yanyan Fang
Publikováno v:
Chemical Communications. 57:11461-11464
GeSe and GeS have emerged as promising light-harvesting materials for photovoltaics due to their attractive optoelectronic properties, non-toxic and earth-abundant constituents, and excellent stability. Here we unveil the diatomic molecule sublimatio
Publikováno v:
Chinese Journal of Chemistry. 38:356-360
Publikováno v:
Materials Chemistry Frontiers. 4:775-787
Thin-film solar cells made from non-toxic and earth-abundant materials are needed to substitute the current best-developed absorbers such as cadmium telluride (CdTe) and copper indium gallium selenide (CIGS) due to the toxicity of Cd and scarcity of
Autor:
Wei Shi, Zongbao Li, Ding-Jiang Xue, Yong Li, Y. Yang, Xiaobo Xing, Xia Wang, Jin-Song Hu, Xinsheng Liu, Shun-Chang Liu
Publikováno v:
Physical Chemistry Chemical Physics. 22:914-918
As a representative in-plane anisotropic two-dimensional (2D) material, germanium monoselenide (GeSe) has attracted considerable attention recently due to its various in-plane anisotropic material properties originating from the low symmetry of a puc