Zobrazeno 1 - 10
of 319
pro vyhledávání: '"Shun Li Shang"'
Autor:
William Yi Wang, Yi Wang, Shun Li Shang, Kristopher A. Darling, Hongyeun Kim, Bin Tang, Hong Chao Kou, Suveen N. Mathaudhu, Xi Dong Hui, Jin Shan Li, Laszlo J. Kecskes, Zi-Kui Liu
Publikováno v:
Materials Research Letters, Vol 5, Iss 6, Pp 415-425 (2017)
Here, we show the strategies to strengthen Mg alloys through modifying the matrix by planar faults and optimizing the local lattice strain by solute atoms. The anomalous shifts of the local phonon density of state of stacking faults (SFs) and long pe
Externí odkaz:
https://doaj.org/article/84185e6b6a3043aa8a432942af4c6ffd
Autor:
William Yi Wang, Shun Li Shang, Yi Wang, Fengbo Han, Kristopher A. Darling, Yidong Wu, Xie Xie, Oleg N. Senkov, Jinshan Li, Xi Dong Hui, Karin A. Dahmen, Peter K. Liaw, Laszlo J. Kecskes, Zi-Kui Liu
Publikováno v:
npj Computational Materials, Vol 3, Iss 1, Pp 1-10 (2017)
High-entropy alloys: cluster-and-glue atoms behind exceptional properties A cluster-and-glue model of atomic arrangements explains the yield strength and mechanical response of high entropy alloys. Inspired by metallic glass, a team led by William Yi
Externí odkaz:
https://doaj.org/article/05036d4cf9084c9cb59f6474dcb5d759
Publikováno v:
APL Materials, Vol 12, Iss 8, Pp 081110-081110-10 (2024)
Controlling the oxidation state of constituents by tuning the oxidizing environment and materials chemistry is vital to the successful synthesis of targeted binary or multicomponent oxides. We have conducted a comprehensive thermodynamic analysis of
Externí odkaz:
https://doaj.org/article/ac3d4d55ce314f3e886bafaf838f7977
Publikováno v:
Journal of Materials Research and Technology, Vol 27, Iss , Pp 4366-4377 (2023)
Dislocation core dominates dislocation mobility and mechanical properties of crystalline solids. To date, a complete landscape for describing dislocation with narrow core in metals like aluminum (Al) remains elusive, and thus deformation mechanisms o
Externí odkaz:
https://doaj.org/article/8edc2d7907604cba8a1d3f4a9d057a50
Autor:
Kathy Azizie, Felix V. E. Hensling, Cameron A. Gorsak, Yunjo Kim, Naomi A. Pieczulewski, Daniel M. Dryden, M. K. Indika Senevirathna, Selena Coye, Shun-Li Shang, Jacob Steele, Patrick Vogt, Nicholas A. Parker, Yorick A. Birkhölzer, Jonathan P. McCandless, Debdeep Jena, Huili G. Xing, Zi-Kui Liu, Michael D. Williams, Andrew J. Green, Kelson Chabak, David A. Muller, Adam T. Neal, Shin Mou, Michael O. Thompson, Hari P. Nair, Darrell G. Schlom
Publikováno v:
APL Materials, Vol 11, Iss 4, Pp 041102-041102-12 (2023)
We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow β-Ga2O3 at a growth rate of ∼1 µm/h with control of the silicon doping concentration from 5 × 1016 to 1019 cm−3. In S-MBE, pre-oxidized gallium in the form of a molecular bea
Externí odkaz:
https://doaj.org/article/5c8dd87e738d470789d55d5159c1238e
Autor:
Patrick Vogt, Felix V. E. Hensling, Kathy Azizie, Celesta S. Chang, David Turner, Jisung Park, Jonathan P. McCandless, Hanjong Paik, Brandon J. Bocklund, Georg Hoffmann, Oliver Bierwagen, Debdeep Jena, Huili G. Xing, Shin Mou, David A. Muller, Shun-Li Shang, Zi-Kui Liu, Darrell G. Schlom
Publikováno v:
APL Materials, Vol 9, Iss 4, Pp 049901-049901-1 (2021)
Externí odkaz:
https://doaj.org/article/a78685c008a84b0ba49b888f95e06607
Autor:
Patrick Vogt, Felix V. E. Hensling, Kathy Azizie, Celesta S. Chang, David Turner, Jisung Park, Jonathan P. McCandless, Hanjong Paik, Brandon J. Bocklund, Georg Hoffman, Oliver Bierwagen, Debdeep Jena, Huili G. Xing, Shin Mou, David A. Muller, Shun-Li Shang, Zi-Kui Liu, Darrell G. Schlom
Publikováno v:
APL Materials, Vol 9, Iss 3, Pp 031101-031101-13 (2021)
This paper introduces a growth method—suboxide molecular-beam epitaxy (S-MBE)—which enables a drastic enhancement in the growth rates of Ga2O3 and related materials to over 1 μm h−1 in an adsorption-controlled regime, combined with excellent c
Externí odkaz:
https://doaj.org/article/e06694ae20774f82ab53c73b78d5b868
Publikováno v:
AIP Advances, Vol 11, Iss 1, Pp 015028-015028-9 (2021)
Magnetic behavior and disproportionation effect of nickelates are closely related to the nature of their ground state. In the present work, the magnetic structure, lattice dynamics, electronic properties, and disproportionation effect of yttrium nick
Externí odkaz:
https://doaj.org/article/fbf69fa847554c0b9114e6fdfa445c82
Autor:
Jiawen You, Jie Pan, Shun-Li Shang, Xiang Xu, Zhenjing Liu, Jingwei Li, Hongwei Liu, Ting Kang, Mengyang Xu, Shaobo Li, Deqi Kong, Wenliang Wang, Zhaoli Gao, Xing Zhou, Tianyou Zhai, Zi-Kui Liu, Jang-Kyo Kim, Zhengtang Luo
Publikováno v:
Nano Letters. 22:10167-10175
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::059ed3e13a97f558b8afc591a1066fa9
https://doi.org/10.1021/acs.nanolett.2c04133
https://doi.org/10.1021/acs.nanolett.2c04133
Autor:
Bo Pan, Hui Sun, Shun-Li Shang, Mihaela Banu, Pei-Chung Wang, Blair E. Carlson, Zi-Kui Liu, Jingjing Li
Publikováno v:
Journal of Manufacturing Processes. 83:212-222
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94ebd8c001941d9981542edba34bd821
https://doi.org/10.1016/j.jmapro.2022.08.062
https://doi.org/10.1016/j.jmapro.2022.08.062