Zobrazeno 1 - 10
of 170
pro vyhledávání: '"Shulong, Lu"'
Autor:
Min Jiang, Yukun Zhao, Penghui Zheng, Jianya Zhang, Wenxian Yang, Min Zhou, Yuanyuan Wu, Renjun Pei, Shulong Lu
Publikováno v:
Fundamental Research, Vol 4, Iss 2, Pp 369-378 (2024)
Due to the wide range of potential applications for next-generation multi-functional devices, the flexible self-powered photodetector (PD) with polarity-switchable behavior is essential but very challenging to be realized. Herein, a wearable bidirect
Externí odkaz:
https://doaj.org/article/167284afb07f4773948b951847c240e2
Publikováno v:
Photonics, Vol 11, Iss 3, p 235 (2024)
Au nanoparticles (NPs) were designed to be embedded into III-V semiconductors to form Au/GaAs Schottky heterostructures, which were used as top-modified cover layers for quantum dot semiconductor saturable absorption mirrors (QD-SESAMs). By harnessin
Externí odkaz:
https://doaj.org/article/6d7bd9658e094cb4a8fbc99ac3b1944e
Publikováno v:
APL Photonics, Vol 8, Iss 7, Pp 076107-076107-9 (2023)
The fast development of brain-inspired neuromorphic computing systems has stimulated urgent requirements for artificial synapses with low-power consumption. In this work, a photonic synaptic device based on (Al,Ga)N nanowire/graphene heterojunction h
Externí odkaz:
https://doaj.org/article/86be681a405f43cea95146248230d0ef
Autor:
Xiaoxu Wu, Junhua Long, Qiangjian Sun, Xia Wang, Zhitao Chen, Menglu Yu, Xiaolong Luo, Xuefei Li, Huyin Zhao, Shulong Lu
Publikováno v:
Heliyon, Vol 9, Iss 6, Pp e16462- (2023)
The extended damp heat and thermal cycling tests were performed on unencapsulated flexible thin-film GaInP/GaAs/InGaAs solar cells to assess the long-term stability. The solar cells were subjected to 85 °C/85% damp heat test for more than 1000 h and
Externí odkaz:
https://doaj.org/article/76b69d581d4e42bf9368ce9ae9038dac
Autor:
Zhitao Chen, Junhua Long, Qiangjian Sun, Xia Wang, Xiaoxu Wu, Xufei Li, Menglu Yu, Xiaolong Luo, Huyin Zhao, Yuechun Fu, Shulong Lu
Publikováno v:
Advanced Energy & Sustainability Research, Vol 4, Iss 2, Pp n/a-n/a (2023)
The stress of GaInP/GaAs/InGaAs triple‐junction (3J) solar cells with different thicknesses of Cu thin‐film substrates is analyzed. X‐ray diffractometer and metallographic examination show that the unstable as‐deposited Cu film undergoes room
Externí odkaz:
https://doaj.org/article/33fe9e0d443240aab3bbe818759e6454
Publikováno v:
Nanomaterials, Vol 13, Iss 8, p 1346 (2023)
InGaN quantum dots (QDs) have attracted significant attention as a promising material for high-efficiency micro-LEDs. In this study, plasma-assisted molecular beam epitaxy (PA-MBE) was used to grow self-assembled InGaN QDs for the fabrication of gree
Externí odkaz:
https://doaj.org/article/b7f705ea3dcb4e5fb24821d831443961
Publikováno v:
Materials, Vol 16, Iss 4, p 1730 (2023)
Metal modulation epitaxy (MME) is a technique in which metal beams (Al, Ga, In, and Mg) are switched on and off in short periods in an RF MBE system while a continuous nitrogen plasma beam is kept on. We systematically studied the effect of periodic
Externí odkaz:
https://doaj.org/article/dc14765640dc4dcb9976b2bef82a4d79
Publikováno v:
Nanomaterials, Vol 13, Iss 2, p 359 (2023)
Due to the emerging requirements of miniaturization and multifunctionality, monolithic devices with both functions of lighting and detection are essential for next-generation optoelectronic devices. In this work, based on freestanding (In,Ga)N films,
Externí odkaz:
https://doaj.org/article/a9c64cdff3e7460e95630e3bc7875ffb
Autor:
Hongjuan Huang, Desheng Zhao, Chengjian Qi, Jingfa Huang, Zhongming Zeng, Baoshun Zhang, Shulong Lu
Publikováno v:
Crystals, Vol 12, Iss 12, p 1810 (2022)
Ge1−xSnx film with Sn content (at%) as high as 13% was grown on Si (100) substrate with Ge buffer layer by magnetron sputtering epitaxy. According to the analysis of HRXRD and Raman spectrum, the quality of the Ge1−xSnx crystal was strongly depen
Externí odkaz:
https://doaj.org/article/6861e875e87942a48bb8060ec055293b
Publikováno v:
Nanomaterials, Vol 13, Iss 1, p 111 (2022)
Owing to its broadband absorption, ultrafast recovery time, and excellent saturable absorption feature, graphene has been recognized as one of the best candidates as a high-performance saturable absorber (SA). However, the low absorption efficiency a
Externí odkaz:
https://doaj.org/article/533391e3945a49ac974f3057ea050daf