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Autor:
Shuji Namakura, S. Newman, Zhen Chen, James S. Speck, Steven P. DenBaars, Derrick S. Kamber, Troy J. Baker, Yuan Wu, Feng Wu
Publikováno v:
Applied Physics Letters. 94:121906
Coalesced, crack-free (0001) AlN films were grown on stripe patterned sapphire substrates without AlN seed layers using hydride vapor phase epitaxy. Using templates with stripes oriented in the ⟨112¯0⟩sapphire direction, lateral epitaxial overgr