Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Shuja A. Abbasi"'
Publikováno v:
International Journal of Electronics. 104:111-125
In this work, we propose a new structure of a lateral bipolar junction transistor (LAT-BJT) on partial buried oxide (PBOX). The novelty of the proposed LAT-BJT device is the use of PBOX, covering just base and emitter regions only. A two-dimensional
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a54f622816896ae429a083598c865508
https://doi.org/10.1080/00207217.2016.1191088
https://doi.org/10.1080/00207217.2016.1191088
Publikováno v:
Materials Today: Proceedings. 3:449-453
In this paper, we design novel three stage operational amplifiers (3SOA). The proposed 3SOAs uses 45 nm technology node carbon nanotube field effect transistors (CNTFET) as well as the conventional MOSFETs. The proposed structures are hybrid in natur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fb7bc734a7276ccefc10416ea9b5edc
https://doi.org/10.1016/j.matpr.2016.01.041
https://doi.org/10.1016/j.matpr.2016.01.041
Publikováno v:
IEEE Transactions on Electron Devices. 62:3357-3364
In this paper, we address an important issue of low ON current in a Schottky barrier (SB) MOSFET by proposing a novel structure of Schottky MOSFET on silicon on insulator. The proposed Schottky device employs a dual material at the source side and is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2070e5ce529b10434c0572459e5e461c
https://doi.org/10.1109/ted.2015.2464112
https://doi.org/10.1109/ted.2015.2464112
Publikováno v:
Journal of Computational Electronics. 14:477-485
In this paper, we propose a new gate engineered dopingless tunnel field effect transistor (GEDL-TFET). GEDL-TFET has double gate and uses metals of different work functions to realize source and drain regions in undoped silicon; a charge plasma conce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37bf08952af3ad2ddca89923f31cb140
https://doi.org/10.1007/s10825-015-0665-5
https://doi.org/10.1007/s10825-015-0665-5
Publikováno v:
2017 International Conference on Multimedia, Signal Processing and Communication Technologies (IMPACT).
In this work, we investigated the parasitic leakage in Fin Electron-Hole Bilayer Tunnel Field-Effect Transistors (Fin EHBTFETs). It has been observed that the gate underlaps and corner-effect in the FinEHBTFETs lead to parasitic OFF state tunneling w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc2bd8dcdc238577eaf163a9ec640b65
https://doi.org/10.1109/mspct.2017.8363965
https://doi.org/10.1109/mspct.2017.8363965
Publikováno v:
Journal of Intelligent & Fuzzy Systems. 24:5-19
The widespread application of fuzzy logic in various fields has been hindered by the problem of low speed of operation of fuzzy processors. Both hardware and software approaches have been adopted to increase the speed of operation of the fuzzy proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f82b8553d2e991c96e4d940b079f5c6
https://doi.org/10.3233/ifs-2012-0503
https://doi.org/10.3233/ifs-2012-0503
Publikováno v:
International Journal of Electrical and Computer Engineering (IJECE). 8:4981
This paper presents FPGA realizations of Walsh transforms. The realizations are targetted for the system of arbitrary waveform generation, addition/ subtraction, multiplication, and processing of several signals based on Walsh transforms which is def
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebfad5b3b3d7f90599c9c232ab5464aa
https://doi.org/10.11591/ijece.v8i6.pp4981-4994
https://doi.org/10.11591/ijece.v8i6.pp4981-4994
Autor:
Syed Manzoor Qasim, Shuja A. Abbasi
Publikováno v:
Journal of Circuits, Systems and Computers. 16:895-909
This paper presents a novel approach for the generation of periodic waveforms in digital form using Field Programmable Gate Array (FPGA) and orthogonal functions. The orthogonal function consists of a set of Rademacher–Walsh Functions, and utilizin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c97d9541e9b918da0a0558873fe41943
https://doi.org/10.1142/s021812660700409x
https://doi.org/10.1142/s021812660700409x
Autor:
Abdul Rahman M. Alamoud, Humyra Shabir, Faisal Bashir, Sajad A. Loan, Mohammad Rafat, M. Nizamuddin, Asim M. Murshid, Shuja A. Abbasi
Publikováno v:
Transactions on Engineering Technologies ISBN: 9789401795876
Charge plasma based devices are gaining interest due to various reasons, since these devices doesn’t require conventional ways of creating different doping regions, therefore these devices are free from various doping related issues related, as ran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7481b6b808e902f25fc353000c394117
https://doi.org/10.1007/978-94-017-9588-3_17
https://doi.org/10.1007/978-94-017-9588-3_17
Autor:
Shuja A. Abbasi, Sajad A. Loan, Faisal Bashir, Humyra Shabir, Abdul Rahman M. Alamoud, Asim M. Murshid, M. Nizamuddin
Publikováno v:
Transactions on Engineering Technologies ISBN: 9789401795876
MOS technology is convenient for implementing OTAs because MOSFETs are inherently voltage-controlled current devices. A variety of CMOS OTAs with different topologies have been developed for different purposes. In this chapter, design and simulation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1155d561ee38a047f0ea49ddafe0d391
https://doi.org/10.1007/978-94-017-9588-3_18
https://doi.org/10.1007/978-94-017-9588-3_18