Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Shuiyuan, Wang"'
Autor:
Rong Bao, Shuiyuan Wang, Xiaoxian Liu, Kejun Tu, Jingquan Liu, Xiaohe Huang, Chunsen Liu, Peng Zhou, Shen Liu
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-13 (2024)
Abstract Inflammation, caused by accumulation of inflammatory cytokines from immunocytes, is prevalent in a variety of diseases. Electro-stimulation emerges as a promising candidate for inflammatory inhibition. Although electroacupuncture is free fro
Externí odkaz:
https://doaj.org/article/0a8bd75fb50b4d88a7209191cac52aeb
Publikováno v:
Advanced Science, Vol 10, Iss 22, Pp n/a-n/a (2023)
Abstract Neuromorphic computing can efficiently handle data‐intensive tasks and address the redundant interaction required by von Neumann architectures. Synaptic devices are essential components for neuromorphic computation. 2D phosphorene, such as
Externí odkaz:
https://doaj.org/article/9658ebcd676c4e0c8782e431c8ae9c71
Publikováno v:
Advanced Intelligent Systems, Vol 4, Iss 7, Pp n/a-n/a (2022)
The traditional von Neumann architecture separates memory from the central processing unit (CPU), resulting in aggravated data transfer bottlenecks between the CPU and memory during a data volume surge. Emerging technologies, such as in‐memory comp
Externí odkaz:
https://doaj.org/article/60f46caa5f4e458c8db8d882b1197694
Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing
Autor:
Shuiyuan Wang, Lan Liu, Lurong Gan, Huawei Chen, Xiang Hou, Yi Ding, Shunli Ma, David Wei Zhang, Peng Zhou
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-9 (2021)
Ferroelectric devices with dielectric layers to modulate channel conductance have limited endurance and miniaturization. Here, the authors demonstrate a 2D ferroelectric channel transistor that integrates memory and computation capabilities, that wil
Externí odkaz:
https://doaj.org/article/60755883baae4f519e46c86774816bea
Publikováno v:
Nature Nanotechnology. 18:486-492
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5210c5d50942a7849e72a55f7858a5b
https://doi.org/10.1038/s41565-023-01339-w
https://doi.org/10.1038/s41565-023-01339-w
Publikováno v:
Advanced Science, Vol 7, Iss 21, Pp n/a-n/a (2020)
Abstract To meet the demands of future intelligent application scenarios, the time‐efficient information acquisition and energy‐efficient data processing capabilities of terminal electronic systems are indispensable. However, in current commercia
Externí odkaz:
https://doaj.org/article/58fb14408d8948208abb049ccd5744c2
Publikováno v:
Advanced Intelligent Systems, Vol 2, Iss 11, Pp n/a-n/a (2020)
In the tide of artificial intelligence evolution, the demand for data computing has exploded, and the von Neumann architecture computer with separate memory and computing units require cumbersome data interaction, which leads to serious degradation i
Externí odkaz:
https://doaj.org/article/1cbd2c42661e4ef399613ac5b1481493
Video object segmentation based on temporal frame context information fusion and feature enhancement
Publikováno v:
Applied Intelligence. 53:6496-6510
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4bd2cf3e5b9c3ff00a0f5792ba687293
https://doi.org/10.1007/s10489-022-03693-z
https://doi.org/10.1007/s10489-022-03693-z
Autor:
Shuiyuan Wang, Xiang Hou, Lan Liu, Jingyu Li, Yuwei Shan, Shiwei Wu, David Wei Zhang, Peng Zhou
Publikováno v:
Research, Vol 2019 (2019)
The von Neumann bottleneck has spawned the rapid expansion of neuromorphic engineering and brain-like networks. Synapses serve as bridges for information transmission and connection in the biological nervous system. The direct implementation of neura
Externí odkaz:
https://doaj.org/article/d0c7c4a61c944e70a0d5e381ff0bc430
Publikováno v:
Nature Nanotechnology. 17:27-32
With the advent of the Internet of Things era, the detection and recognition of moving objects is becoming increasingly important1. The current motion detection and recognition (MDR) technology based on the complementary metal oxide semiconductor (CM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab5d061d50956ecf97c27728aa26f7b4
https://doi.org/10.1038/s41565-021-01003-1
https://doi.org/10.1038/s41565-021-01003-1