Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Shuichi Yagi"'
Autor:
Yangming Du, Hongyang Yan, Peng Luo, Xiao Tan, Ekkanath Madathil Sankara Narayanan, Hiroji Kawai, Shuichi Yagi, Hironobu Narui
Publikováno v:
IEEE Transactions on Electron Devices. 70:178-184
Autor:
Alireza Sheikhan, Sankara Narayanan Ekkanath Madathil, Hiroji Kawai, Shuichi Yagi, Hironobu Narui
Publikováno v:
Japanese Journal of Applied Physics.
Gallium Nitride (GaN) devices inherently offer many advantages over silicon power devices including higher operating frequency, lower on-state resistance, and higher operating temperature capabilities, which can enable higher power density, more effi
Autor:
Alireza Sheikhan, Gopika Narayanankutty, E. M. Sankara Narayanan, Hiroji Kawai, Shuichi Yagi, Hironobu Narui
Publikováno v:
Japanese Journal of Applied Physics. 62:014501
The surge current capability of power diodes is one of the essential parameters that needs to be considered for high power density operations in power electronic applications. Gallium Nitride (GaN) is emerging as the next generation of power semicond
Autor:
Paul R. Chalker, Ruiyang Yu, Marleen Van Hove, Geoff Haynes, Enrico Zanoni, Jie Hu, Xu Li, Hiroshi Amano, Daniel Piedra, Hiroji Kawai, Min Sun, Martin Kuball, Qingyun Huang, L. Di Cioccio, Carlo De Santi, Rongming Chu, Matthew Charles, Yuhao Zhang, Rekha Reddy, Erwan Morvan, Joseph J. Freedsman, Akira Nakajima, Tomas Palacios, Thomas Heckel, Denis Marcon, Shu Yang, Stephen Oliver, A. Torres, Oliver Häberlen, Stefan Zeltner, Dan Kinzer, Marc Plissonnier, Vineet Unni, Iain G. Thayne, Gaudenzio Meneghesso, Patrick Fay, David J. Wallis, Mengyuan Hua, Chris Youtsey, Shuichi Yagi, Sheng Jiang, Alex Q. Huang, Louis J. Guido, Matteo Meneghini, Ashwani Kumar, Jingshan Wang, Dilini Hemakumara, Nicola Trivellin, Martin Marz, Jinqiao Xie, Nadim Chowdhury, Maria Merlyne De Souza, T Bouchet, Michael J. Uren, Bernd Eckardt, Ekkanath Madathil Sankara Narayanan, Peter A. Houston, K. B. Lee, Matteo Borga, Yannick Baines, Takashi Egawa, Robert McCarthy, Stefaan Decoutere, Kevin J. Chen
Publikováno v:
Journal of Physics D: Applied Physics
Amano, H, Baines, Y, Beam, E, Borga, M, Bouchet, T, Chalker, P R, Charles, M, Chowdhury, N, Chu, R, De Santi, C, De Souza, M M, Decoutere, S, Di Cioccio, L, Eckardt, B, Egawa, T, Freedsman, J J, Guido, L, Häberlen, O, Haynes, G, Heckel, T, Hemakumara, D, Houston, P, Hu, J, Hua, M, Huang, Q, Huang, A, Jiang, S, Kawai, H, Kinzer, D, Kuball, M, Kumar, A, Lee, K B, Li, X, Marcon, D, März, M, McCarthy, R, Meneghesso, G, Meneghini, M, Morvan, E, Nakajima, A, Narayanan, E M S, Oliver, S, Palacios, T, Piedra, D, Plissonnier, M, Reddy, R, Sun, M, Thayne, I, Torres, A, Trivellin, N, Unni, V, Uren, M J, Van Hove, M, Wallis, D J, Xie, J, Yagi, S, Yang, S, Youtsey, C, Yu, R, Zanoni, E, Zeltner, S & Zhang, Y 2018, ' The 2018 GaN power electronics roadmap ', Journal of Physics D: Applied Physics, vol. 51, no. 16, 163001 . https://doi.org/10.1088/1361-6463/aaaf9d
Zhang, Yuhao
Amano, H, Baines, Y, Beam, E, Borga, M, Bouchet, T, Chalker, P R, Charles, M, Chowdhury, N, Chu, R, De Santi, C, De Souza, M M, Decoutere, S, Di Cioccio, L, Eckardt, B, Egawa, T, Freedsman, J J, Guido, L, Häberlen, O, Haynes, G, Heckel, T, Hemakumara, D, Houston, P, Hu, J, Hua, M, Huang, Q, Huang, A, Jiang, S, Kawai, H, Kinzer, D, Kuball, M, Kumar, A, Lee, K B, Li, X, Marcon, D, März, M, McCarthy, R, Meneghesso, G, Meneghini, M, Morvan, E, Nakajima, A, Narayanan, E M S, Oliver, S, Palacios, T, Piedra, D, Plissonnier, M, Reddy, R, Sun, M, Thayne, I, Torres, A, Trivellin, N, Unni, V, Uren, M J, Van Hove, M, Wallis, D J, Xie, J, Yagi, S, Yang, S, Youtsey, C, Yu, R, Zanoni, E, Zeltner, S & Zhang, Y 2018, ' The 2018 GaN power electronics roadmap ', Journal of Physics D: Applied Physics, vol. 51, no. 16, 163001 . https://doi.org/10.1088/1361-6463/aaaf9d
Zhang, Yuhao
Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At
Autor:
Hiroji Kawai, Yasunobu Sumida, Yoshitaka Nakano, Yoshihiro Irokawa, Masatomo Sumiya, Shuichi Yagi
Publikováno v:
MRS Proceedings. 1635:109-114
We have investigated on a relation between C-related deep-level defects and turn-on recovery characteristics in bulk regions of AlGaN/GaN hetero-structures containing various C concentrations, employing their Schottky barrier diodes. With decreasing
Publikováno v:
Materials Science Forum. :1333-1336
We investigated the current collapse characteristics of the fabricated MIS-HEMT with the SiO2, SiN and high-k gate insulator. TiO2 was employed as the high-k material. We found the significant drain current change in the switching characteristic when
Autor:
Nakao Akutsu, Mitsuaki Shimizu, Akira Nakajima, Yoshiki Yano, Shuichi Yagi, Hajime Okumura, Akinori Ubukata, Masaki Inada
Publikováno v:
Materials Science Forum. :1329-1332
The current collapse of normally-off mode AlGaN/GaN/AlGaN double heterojunction field effect transistors was investigated in comparison with the normal AlGaN/GaN heterojunction filed effect transistors.
Publikováno v:
Materials Science Forum. :1345-1348
The effect of AlGaN surface traps on breakdown voltage VB and drain current collapse in AlGaN/GaN high electron mobility transistors (HEMTs) were investigated using experimental measurement and numerical simulation. The drain current transient due to
Publikováno v:
Materials Science Forum. :1035-1038
The mechanism of drain current collapse in AlGaN/GaN high electron mobility transistors (HEMTs) was investigated. Current collapse was clearly observed for TiO2 passivated HEMTs. However, no evidence of current collapse was apparent for SiNx passivat
Autor:
Kazuo Arai, Guanxi Piao, Mitsuaki Shimizu, Yoshiki Yano, Masaki Inada, Nakao Akutsu, Hajime Okumura, Shuichi Yagi
Publikováno v:
physica status solidi c. 4:2674-2677
Nearly normally-off operation of the GaN-based heterojunction field effect transistors was obtained using AlGaN/GaN/AlGaN double heterojunction channel. The aluminum compositions of the AlGaN heterobarriers are designed so as to deplete the electron