Zobrazeno 1 - 10
of 103
pro vyhledávání: '"Shuichi Tahara"'
Autor:
Nobuyuki Ishiwata, Naoki Kasai, Shunsuke Fukami, S. Saito, Hiromitsu Hada, Hiroaki Honjo, Ryusuke Nebashi, Noboru Sakimura, Shuichi Tahara, Kenichi Shimura, S. Miura, Norikazu Ohshima, Kiyotaka Tsuji, Kaoru Mori, Y. Kato, Yoshiyuki Fukumoto, Hideaki Numata, Kiyokazu Nagahara, Katsumi Suemitsu, Tomonori Mukai, Tadahiko Sugibayashi, Tetsuhiro Suzuki, Takeshi Honda
Publikováno v:
IEEE Journal of Solid-State Circuits. 42:2378-2385
This paper describes a recently developed 16-Mb toggle magnetic random access memory (MRAM). It has 100-MHz burst modes that are compatible with a pseudo-SRAM even though the toggle cell requires reading and comparing sequences in write modes. To acc
Publikováno v:
IEICE Transactions on Electronics. :1936-1940
Apart from magnetic random access memories (MRAM), nonvolatile memories cannot be used without causing fatigue. As the use of MRAMs can solve fatigue problems, MRAMs have a large potential to open up large new markets. The manufacturing cost of LSIs
Autor:
Shuichi Tahara, Tetsuhiro Suzuki, Noboru Sakimura, Hiroaki Honjo, Takeshi Honda, S. Saito, Tadahiko Sugibayashi, Nobuyuki Ishiwata
Publikováno v:
IEEE Journal of Solid-State Circuits. 42:830-838
This paper describes newly developed magnetic random access memory (MRAM) cell technology suitable for high-speed memory macros embedded in next-generation system LSIs: a two-transistor one-magnetic tunneling junction (2T1MTJ) cell structure, a write
Autor:
Naoki Kasai, Shuichi Tahara, Tadahiko Sugibayashi, Hiromitsu Hada, Takeshi Honda, Noboru Sakimura
Publikováno v:
IEICE Transactions on Electronics. :531-535
We propose a writing circuit scheme to screen intermittent failure cells for toggle MRAM. The scheme, comprising a current waveform circuitry that controls rise/fall time of writing current, drastically decreases the probability of intermittent failu
Publikováno v:
Electronics and Communications in Japan (Part II: Electronics). 90:42-48
For each case of current and voltage detection in series connections, and current and voltage in parallel connections in the multi-layered structure of a magnetoresistive random access memory (MRAM) cell having two serially connected magnetic tunnel
Autor:
Yoshiyuki Fukumoto, Minoru Amano, Shuichi Tahara, Hiromitsu Hada, Hiroaki Yoda, Yoshiaki Asao, Norikazu Ohshima, Hideaki Numata, Kiyokazu Nagahara, Katsumi Suemitsu
Publikováno v:
Japanese Journal of Applied Physics. 45:3829-3834
We examined the effects of the capping layers of Ta, Al-oxide (AlO), and Ru on the magnetic properties of ultrathin (1–20 nm) NiFe free layers and investigated thermal degeneration of the switching field (Hsw) in magnetic tunnel junctions (MTJs) us
Publikováno v:
IEEE Transactions on Appiled Superconductivity. 13:450-453
Large-scale telecommunication systems in the larger nationwide network of the next decade will require routers having a packet switching throughput capacity of over several-tens Tbps. In such future high-end routers, the packet switch, which is the b
Publikováno v:
Physica C: Superconductivity. :1471-1474
To expand designable circuit scale, we have developed a new cell-based circuit design for single flux quantum (SFQ) circuit. We call it CONNECT cell library. The CONNECT cell library has over 100 cells at present. Each CONNECT cell consists of a Veri
Publikováno v:
Physica C: Superconductivity. :1466-1470
We designed a single-flux-quantum (SFQ) 2×2 unit switch. It is the main component of the SFQ Banyan packet switch we are developing. The unit switch transfers two input packets to the outputs according to their destination addresses. Our unit switch
Publikováno v:
Physica C: Superconductivity. :127-130
Internal speedup architecture is a very useful approach to increase system performance. A single flux quantum circuit, which can operate at a speed 10 times higher than that of the fastest CMOS circuits, is suitable for use with this architecture. To