Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Shuichi Noda"'
Autor:
Daisuke Ohori, Takuya Fujii, Shuichi Noda, Wataru Mizubayashi, Kazuhiko Endo, Yao-Jen Lee, Jenn-Hwan Tarng, Yiming Li, Seiji Samukawa
Publikováno v:
IEEE Open Journal of Nanotechnology, Vol 2, Pp 26-30 (2021)
We investigated a high electron mobility Ge FinFET fabricated by defect-free and roughness-free atomic layer neutral beam etching (NBE) compared with one fabricated by conventional plasma etching (PE). The etching interface roughness and defect were
Externí odkaz:
https://doaj.org/article/85dd0664586d42f58c58f3a223a22441
Autor:
Asahi Nagano, Kanato Kitamura, Shuichi Noda, Sunao Murakami, Kohei Iguchi, Sommawan Khumpuang, Shiro Hara
Publikováno v:
Electrical Engineering in Japan. 215
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4d468dbff84e152010a1a0107472828
https://doi.org/10.1002/eej.23412
https://doi.org/10.1002/eej.23412
Autor:
Yiming Li, Seiji Samukawa, Wataru Mizubayashi, Takuya Fujii, Jenn-Hwan Tarng, Yao-Jen Lee, Shuichi Noda, Daisuke Ohori, Kazuhiko Endo
Publikováno v:
IEEE Open Journal of Nanotechnology, Vol 2, Pp 26-30 (2021)
We investigated a high electron mobility Ge FinFET fabricated by defect-free and roughness-free atomic layer neutral beam etching (NBE) compared with one fabricated by conventional plasma etching (PE). The etching interface roughness and defect were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2301368d88ebff4aff992aefda4986f0
https://doi.org/10.1109/ojnano.2021.3055150
https://doi.org/10.1109/ojnano.2021.3055150
Autor:
Chia-Hsun Wu, Heng-Tung Hsu, Shuichi Noda, Yen-Ku Lin, Seiji Samukawa, Chia-Ching Huang, Quang Ho Luc, Po-Chun Chang, Hsiao-Chieh Lo, Edward Yi Chang
Publikováno v:
IEEE Electron Device Letters. 38:771-774
High-performance GaN metal–oxide–semi-conductor high-electron-mobility transistors (MOSHEMTs) using Al2O3 gate dielectric deposited by atomic layer deposition (ALD) and damage-free neutral beam etch (NBE) gate recess process for millimeter-wave p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acf675f08bdccd093212eed245356fcd
https://doi.org/10.1109/led.2017.2696569
https://doi.org/10.1109/led.2017.2696569
Autor:
Shuichi Noda, Po-Chun Chang, Shih-Chien Liu, Heng-Tung Hsu, Hsiao-Chieh Lo, Edward Yi Chang, Yuen Yee Wong, Yen-Ku Lin, Seiji Samukawa, Chia-Hsun Wu, Quang Ho Luc
Publikováno v:
IEEE Electron Device Letters. 37:1395-1398
The electrical performances of gate-recessed AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated using the damage-free neutral beam etching (NBE) method are demonstrated. The NBE method could eliminate the plasma-induced defects generated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d99bb662fc08e28a2e0620763b84a6b
https://doi.org/10.1109/led.2016.2609938
https://doi.org/10.1109/led.2016.2609938
Autor:
Yiming Li, Tseung-Yuen Tseng, T.-C. Hong, Shuichi Noda, M.-C. Chen, Chieh-Yang Chen, Shang-Shiun Chuang, K.-P. Huang, W.-F. Wu, T.-Y. Yu, Y.-M. Huang, Guo-Wei Huang, Po-Jung Sung, Jiun-Yun Li, Kuo-Hsing Kao, Bo-Yuan Chen, Yao-Jen Lee, Min-Cheng Chen, Jia-Min Shieh, Seiji Samukawa, Yeong-Her Wang, C.-J. Su, Y.-L. Jian, Tien-Sheng Chao, Ta-Chun Cho, Wen-Kuan Yeh, Fu-Kuo Hsueh, Y.-C. Tsou, Chien-Ting Wu, Wen-Hsien Huang
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
Ge peaking n- and p-FinFETs have been demonstrated by adopting neutral beam etching (NBE) and anisotropic neutral beam oxidation (NBO) processes. The irradiation-free NB processes not only suppress surface roughness but also guarantee low defect gene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4b21642ef288f5cbef4e770303ded61
https://doi.org/10.1109/iedm.2016.7838535
https://doi.org/10.1109/iedm.2016.7838535
Autor:
Yiming Li, Yao-Jen Lee, Kazuhiko Endo, Hideyuki Kurihara, Yosuke Tanimoto, Seiji Samukawa, Wataru Mizubayashi, Shuichi Noda, Daisuke Ohori, Daisuke Sato, Takuya Ozaki, Takuya Fujii
Publikováno v:
Journal of Vacuum Science & Technology A. 37:051001
The authors developed extremely selective etching for making an atomically flat, defect-free germanium fin (Ge Fin) structure. The etching uses a hydrogen bromide (HBr) neutral beam (NB), and they investigated the etching reaction differences between
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee7cbf9565c438b4a399d195a40769b2
https://doi.org/10.1116/1.5100547
https://doi.org/10.1116/1.5100547
Publikováno v:
Materials Research Express. 6:065059
Amorphous SiC/Si multilayers were fabricated using alternately magnetron sputtering of SiC and electron beam evaporation of Si targets. The as-deposited films were annealed at different temperatures from 800 till 1000 ?C to form Si-nanocrystals (Si-N
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c0e46c18d72255075eae97d9df8023e
https://doi.org/10.1088/2053-1591/ab102a
https://doi.org/10.1088/2053-1591/ab102a
Autor:
Yiming Li, En Tzu Lee, Daisuke Ohori, Yao-Jen Lee, Kazuhiko Endo, Takuya Ozaki, Takuya Fujii, Shuichi Noda, Seiji Samukawa, Wataru Mizubayashi
Publikováno v:
Journal of Vacuum Science & Technology A. 37:021003
In case of using pure chlorine chemistry, Ge etching reactivity is three times higher than Si etching reactivity because of the larger lattice spacing in Ge. As a result, during the chlorine plasma etching of a Ge Fin structure, there are serious pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68b8cf148774d1bb956b980cdcc3dcd4
https://doi.org/10.1116/1.5079692
https://doi.org/10.1116/1.5079692
Autor:
Quang Ho Luc, Chia-Ching Huang, Ruey-Bor Lee, Yen-Ku Lin, Seiji Samukawa, Shuichi Noda, Edward Yi Chang
Publikováno v:
2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO).
An enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched (NBE) gate recess is reported. The NBE can eliminate the plasma-induced defects that generated by irradiating UV/VUV photons as encoun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af6e90ee6a1d8a2c6e61afebdc3197f1
https://doi.org/10.1109/nano.2016.7751501
https://doi.org/10.1109/nano.2016.7751501