Zobrazeno 1 - 10
of 250
pro vyhledávání: '"Shui-Yang Lien"'
Autor:
Ming-Jie Zhao, Yao-Tian Wang, Jia-Hao Yan, Hai-Cheng Li, Hua Xu, Dong-Sing Wuu, Wan-Yu Wu, Feng-Min Lai, Shui-Yang Lien, Wen-Zhang Zhu
Publikováno v:
Journal of Science: Advanced Materials and Devices, Vol 9, Iss 2, Pp 100722- (2024)
High-k hafnium oxide (HfO2) film was prepared by high power impulse magnetron sputtering (HiPIMS). The influences of oxygen supply on the plasma state, film properties and TFT performance were investigated. The films are near-stoichiometric and prefe
Externí odkaz:
https://doaj.org/article/161869cfc05b4834a490a4ffa61334b9
Autor:
Ming-Jie Zhao, Jie Huang, Hai-Cheng Li, Qi-Zhen Chen, Qi-Hui Huang, Wan-Yu Wu, Dong-Sing Wuu, Feng-Min Lai, Shui-Yang Lien, Wen-Zhang Zhu
Publikováno v:
Journal of Science: Advanced Materials and Devices, Vol 9, Iss 2, Pp 100672- (2024)
High-performance P-type cuprous oxide (Cu2O) film was prepared at room temperature by high power impulse magnetron sputtering. Optical emission spectra revealed that the ratio of Cu radicals/ions in the plasma significantly decreased with increasing
Externí odkaz:
https://doaj.org/article/618f164bafba41b785f7e7f3bc141019
Autor:
Xiao-Ying Zhang, Duan-Chen Peng, Jia-Hao Yan, Zhi-Xuan Zhang, Yu-Jiao Ruan, Juan Zuo, An Xie, Wan-Yu Wu, Dong-Sing Wuu, Chien-Jung Huang, Feng-Min Lai, Shui-Yang Lien, Wen-Zhang Zhu
Publikováno v:
Journal of Materials Research and Technology, Vol 27, Iss , Pp 4213-4223 (2023)
Aluminum nitride (AlN) film is a promising material which is used in various fields. In this study, AlN films with different plasma powers were grown by remote plasma atomic layer deposition. Saturation experiments have been applied in the plasma pow
Externí odkaz:
https://doaj.org/article/e0435603c1124616b41be1f7f8e15e96
Autor:
Pao-Hsun Huang, Yu-Quan Zhu, Sufen Wei, Yi Liu, Chien-Jung Huang, Feng-Min Lai, Yan Liu, Shui-Yang Lien
Publikováno v:
Journal of Materials Research and Technology, Vol 24, Iss , Pp 4618-4626 (2023)
The RF-sputtered β-Ga2O3 films prepared on sapphire substrates were treated by rapid thermal annealing (RTA) with an ultrafast processing time of 30 s. The effects of RTA at different process temperatures from 600 to 800 °C on the β-Ga2O3 films we
Externí odkaz:
https://doaj.org/article/10ba8c08ac2a413ab39e7da68c5a2e30
Autor:
Mingjie Zhao, Jiahao Yan, Yaotian Wang, Qizhen Chen, Rongjun Cao, Hua Xu, Dong-Sing Wuu, Wan-Yu Wu, Feng-Min Lai, Shui-Yang Lien, Wenzhang Zhu
Publikováno v:
Nanomaterials, Vol 14, Iss 8, p 690 (2024)
It is usually difficult to realize high mobility together with a low threshold voltage and good stability for amorphous oxide thin-film transistors (TFTs). In addition, a low fabrication temperature is preferred in terms of enhancing compatibility wi
Externí odkaz:
https://doaj.org/article/f1e593b8d6de457a9414f29f81bdbaf3
Publikováno v:
Journal of Materials Research and Technology, Vol 21, Iss , Pp 3113-3128 (2022)
A remarkable improvement in the conductivity of grown nitrogen-doped p-type β-Ga2O3 films was successfully achieved via the thermal oxidation of GaN in N2O ambient at 1100 °C. In the vacuum test environment, its room temperature Hall hole concentra
Externí odkaz:
https://doaj.org/article/23c77d93c1c04346ac107c0b64aa3c75
Autor:
Ming-Jie Zhao, Xin-Hao Xu, Mei-Jia Yang, Yu-Yun Lo, Sen-Lin Li, Jing-Feng Bi, Ming-Chun Tseng, Dong-Sing Wuu, Ray-Hua Horng, Hsiao-Wen Zan, Shui-Yang Lien, Wen-Zhang Zhu
Publikováno v:
Results in Physics, Vol 44, Iss , Pp 106159- (2023)
An omnidirectional reflector (ODR) consisted of (MgF2)/Ag was employed in AlGaInP-based vertical red light-emitting diodes (LEDs) in order to increase the light extraction hence the wall-plug efficiency. In this structure, the dielectric MgF2 layer w
Externí odkaz:
https://doaj.org/article/9d19037525974212bcf5c7bacf87fed3
Autor:
Yen-Wei Yeh, Su-Hui Lin, Tsung-Chi Hsu, Shouqiang Lai, Po-Tsung Lee, Shui-Yang Lien, Dong-Sing Wuu, Guisen Li, Zhong Chen, Tingzhu Wu, Hao-Chung Kuo
Publikováno v:
Nanoscale Research Letters, Vol 16, Iss 1, Pp 1-14 (2021)
Abstract In recent years, the process requirements of nano-devices have led to the gradual reduction in the scale of semiconductor devices, and the consequent non-negligible sidewall defects caused by etching. Since plasma-enhanced chemical vapor dep
Externí odkaz:
https://doaj.org/article/66fda989a7bd4adcb7b64c7c58c6cab2
Publikováno v:
Molecules, Vol 28, Iss 10, p 4103 (2023)
The two-step sequential deposition is a commonly used method by researchers for fabricating perovskite solar cells (PSCs) due to its reproducibility and tolerant preparation conditions. However, the less-than-favorable diffusive processes in the prep
Externí odkaz:
https://doaj.org/article/3fbee9ff3a0b4fc7ad173add3ed906fb
Autor:
Pao-Hsun Huang, Pin-Jia Lai, Wen-Ray Chen, Chuan-Hsi Liu, Po-Wen Sze, Shui-Yang Lien, Chien-Jung Huang
Publikováno v:
Crystals, Vol 13, Iss 3, p 452 (2023)
General hot-plate heating is used to form a crystal structure of films; however, how to achieve a homogeneous and regulated crystal formation will be a crucial challenge in the future. In this study, based on perovskite-series materials, organic meth
Externí odkaz:
https://doaj.org/article/ba0077a607014e59b41690886ad50004