Zobrazeno 1 - 10
of 407
pro vyhledávání: '"Shui-Jinn Wang"'
Publikováno v:
AIP Advances, Vol 13, Iss 7, Pp 075307-075307-8 (2023)
This paper proposes a solution to mitigate the trade-off between dark and photocurrents in the indium gallium zinc oxide (IGZO) thin-film transistor (TFT) applications, such as ultraviolet photodetectors, by using a stacked Pt/NiO dual capping layer
Externí odkaz:
https://doaj.org/article/7282a730e6854a799c83695a720630e3
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 5, Iss 3, Pp 164-169 (2017)
Speed and power performances of Si-based stacked-nanowire gate-all-around (GAA) FETs and pragmatic ultra-thin-fin FETs at the 5nm CMOS technology node are projected, compared, and physically explained based on 3-D numerical simulations. The respectiv
Externí odkaz:
https://doaj.org/article/3ceddf71900b4c3ebc9d82c8830f6c3c
Publikováno v:
IEEE Electron Device Letters. 43:1299-1302
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a76325e29a2782865754ab39dd617e8
https://doi.org/10.1109/led.2022.3183217
https://doi.org/10.1109/led.2022.3183217
Autor:
Chien-Hung Wu, Srikant Kumar Mohanty, Bo-Wen Huang, Kow-ming Chang, Shui-Jinn Wang, Kung-jeng Ma
Publikováno v:
Nanotechnology. 34:175202
In this work, staggered bottom-gate structure amorphous In–Ga–Zn–O (a-IGZO) thin film transistors (TFTs) with high-k ZrO2 gate dielectric were fabricated using low-cost atmospheric pressure-plasma enhanced chemical vapor deposition (AP-PECVD) w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10ed5639c7e0c8a2a0a1b494d7e9bc18
https://doi.org/10.1088/1361-6528/acb5f9
https://doi.org/10.1088/1361-6528/acb5f9
Publikováno v:
Japanese Journal of Applied Physics. 62:SC1006
Ultraviolet photodetectors (UVPDs) based on Si-Zn-SnO (SZTO) thin-film transistors (TFTs) with a stacked dual-channel layer (DCL) structure with different carrier concentration and NiO capping layer (CL) to alleviate the trade-off between dark curren
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d102e048b6d4107ac50b79999d906d3
https://doi.org/10.35848/1347-4065/aca33c
https://doi.org/10.35848/1347-4065/aca33c
Autor:
Yung-Chun Tu, Shui-Jinn Wang, Tseng-Hsing Lin, Chien-Hsiung Hung, Tsung-Che Tsai, Ru-Wen Wu, Kai-Ming Uang, Tron-Min Chen
Publikováno v:
International Journal of Photoenergy, Vol 2015 (2015)
Quasi-monocrystal ZnO film grown using the hydrothermal growth method is used for the fabrication of Cu2O/ZnO heterojunction (HJ) ultraviolet photodetectors (UV-PDs). The HJ was formed via the sputtering deposition of p-type Cu2O onto hydrothermally
Externí odkaz:
https://doaj.org/article/83f136511cf1478ba3d46d5b4a2638a8
Autor:
Yung-Chun Tu, Shui-Jinn Wang, Chien-Hung Wu, Kow-Ming Chang, Tseng-Hsing Lin, Chien-Hsiung Hung, Jhen-Siang Wu
Publikováno v:
International Journal of Photoenergy, Vol 2015 (2015)
The fabrication of silicon oxynitride (SiON)/ZnO nanotube (NT) arrays and their application in improving the energy conversion efficiency (η) of crystalline Si-based solar cells (SCs) are reported. The SiON/ZnO NT arrays have a graded-refractive-ind
Externí odkaz:
https://doaj.org/article/6a9a0f496a9045c1bd093c21e75f4b7c
Publikováno v:
International Journal of Photoenergy, Vol 2014 (2014)
Single-crystal silicon-based solar cells laminated with tempered-glass and ceramic tiles for use in a building’s façade have been developed. The optical, thermal, and electrical properties of the proposed PV module are first evaluated, and then a
Externí odkaz:
https://doaj.org/article/00eaa90648a143dcb501d67108cbf261
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50766737cf5bc390b6c1ca830f9d8ff7
https://doi.org/10.7567/ssdm.2020.g-10-03
https://doi.org/10.7567/ssdm.2020.g-10-03
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec1cb2be591d9181e151dc3388eb58e5
https://doi.org/10.7567/ssdm.2020.j-4-03
https://doi.org/10.7567/ssdm.2020.j-4-03