Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Shui-Hung Chen"'
Publikováno v:
2017 IEEE International Reliability Physics Symposium (IRPS).
In this paper, the physical explanation of the time dependent dielectric breakdown (TDDB) power law lifetime model is successfully interpreted through the analysis of oxide trap generation in HK/IL gate stack in NMOS-FinFET technology. The experiment
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58aab4cbd95615c163c542410bb0ffbe
https://doi.org/10.1109/irps.2017.7936289
https://doi.org/10.1109/irps.2017.7936289
Publikováno v:
2016 IEEE International Reliability Physics Symposium (IRPS).
In this paper, the detailed TDDB models of HK/IL gate stack for N/PMOS were established through the analysis of oxide trap generation in FinFET technology. We systematically characterized gate oxide traps of HK and IL layers by AC admittance and SILC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2aa41cad13fdf64a2395b0dbc010bc4a
https://doi.org/10.1109/irps.2016.7574573
https://doi.org/10.1109/irps.2016.7574573
Autor:
H.J. Tao, Shui-Jinn Wang, Chang-Luen Wu, B.F. Hung, Mong-Song Liang, Yong-Tian Hou, F.Y. Yen, Y. Jin, A. Chin, Shui-Hung Chen
Publikováno v:
IEEE Transactions on Electron Devices. 54:257-261
A novel 1000 degC-stable IrxSi gate on HfSiON is shown for the first time with full process compatibility to current very-large-scale-integration fabrication lines and proper effective work function of 4.95 eV at 1.6-nm equivalent-oxide thickness. In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63a622fc9e5b9e9922739be40a6b6209
https://doi.org/10.1109/ted.2006.888626
https://doi.org/10.1109/ted.2006.888626
Autor:
Yean-Kuen Fang, Shui-Hung Chen, Yong-Shiuan Tsair, Ming-Fang Wang, Liang-Gi Yao, Chih-Wei Yang, Chung-Hui Chen, Mong-Song Liang, Chen-Hua Yu
Publikováno v:
Solid-State Electronics. 46:539-544
High quality and high performance gate dielectrics prepared by NH 3 nitridation, with equivalent oxide thickness (EOT) down to 1.3–1.6 nm, were firstly investigated. NH 3 nitridation can effectively reduces the EOT to a lower down gate leakage curr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5db22794a1c7fcff041ecd5a51993614
https://doi.org/10.1016/s0038-1101(01)00274-x
https://doi.org/10.1016/s0038-1101(01)00274-x
Autor:
Mong-Song Liang, Chih-Wei Yang, Shyh-Fann Ting, Ming-Fang Wang, Yean-Kuen Fang, Yong-Shiuan Tsair, Chen-Hua Yu, Shui-Hung Chen, Chung-Hui Chen
Publikováno v:
Solid-State Electronics. 45:461-465
Effects of post-treatments on ultrathin nitride/oxide stacks prepared by commercial rapid thermal CVD (RTCVD) cluster tools have been investigated. Two-step post-deposition treatments (i.e., NH 3 nitridation followed by N 2 O annealing) were performe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12adda202affa6f7dcd7b22f5fbcc57d
https://doi.org/10.1016/s0038-1101(01)00019-3
https://doi.org/10.1016/s0038-1101(01)00019-3
Autor:
H.J. Tao, Peng-Soon Lim, H.J. Lin, Mong-Song Liang, J.C. Jiang, F.Y. Yen, S.M. Jang, Vincent S. Chang, Yong-Tian Hou, L.G. Yao, Shui-Hung Chen, C.L. Hung, Y. Jin, P.F. Hsu, C.C. Chen
Publikováno v:
IEEE Electron Device Letters. 28:201-203
This letter reports the engineering of effective work function (EWF) for tantalum carbide (TaC) metal gate on high-k gate dielectrics. The dependence of EWF on Si concentration in HfSiO as well as nitridation techniques is revealed. The EWF was extra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb5e7a7d95f6a4c4f5e4ded4a3881ad2
https://doi.org/10.1109/led.2007.891271
https://doi.org/10.1109/led.2007.891271
Autor:
Chuing-Liang Lin, Mong-Song Liang, Shyh-Fann Ting, Cheng-Nan Chang, Chung-Hui Chen, Chih-Wei Yang, Shui-Hung Chen, Yean-Kuen Fang, Tuo-Hong Hou, Ming-Fang Wang, Chen-Hua Yu, Mo-Chiun Yu, Yong-Shiuan Tsair
Publikováno v:
Solid-State Electronics. 46:597-599
The electrical properties of poly-SiGe gated PMOSFETs have been investigated and compared to the conventional poly-Si gated device. Both types of PMOSFETs use ultra-thin nitride gate dielectric. Poly-SiGe gated devices exhibit 10% higher inversion ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e6da435fcd9a8b3ad7aed570d729cb7
https://doi.org/10.1016/s0038-1101(01)00262-3
https://doi.org/10.1016/s0038-1101(01)00262-3
Publikováno v:
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.
The influence of the contact-to-contact space on the ESD performance of multi-finger silicided ground-gate NMOS (GGNMOS) is investigated. We find that the conventional contact layout, which has short contact-to-contact space, induces current localiza
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5442cac0ddc276ab1a98298cb9f6cba7
https://doi.org/10.1109/relphy.2007.369964
https://doi.org/10.1109/relphy.2007.369964
Autor:
Mong-Song Liang, Tuo-Hung Hou, Y. Jin, Mao-Chieh Chen, Liang-Gi Yao, Ming-Tsong Wang, Shui-Hung Chen, Wen-Fa Wu
Publikováno v:
Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2004 (IEEE Cat. No.04TH8743).
The electrical characteristics of HfSiO/SiO/sub 2/ high-k gate stacks have been extensively explored with regard to the effects of base oxide. The flatband voltage shift in N/PMOS capacitors is independent of base oxide thickness, and the dielectric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e55bdef2715393975ebad9896f86f395
https://doi.org/10.1109/ipfa.2004.1345526
https://doi.org/10.1109/ipfa.2004.1345526
Autor:
Juing-Yi Cheng, Chen Chien-Hao, Yean-Kuen Fang, Yong-Shiuan Tsair, Liang-Gi Yao, Mong-Song Liang, W. D. Wang, Shi-Ming Chen, Shui-Hung Chen, C. S. Lin, Chih-Wei Yang, Ming-Tsong Wang
Publikováno v:
Electronics Letters. 39:1499
A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH3, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c64c3d83ff4cdc3326fd8176164d055
https://doi.org/10.1049/el:20030988
https://doi.org/10.1049/el:20030988