Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Shuhei Yoshitomi"'
Autor:
Shunpei Yamazaki, Shuhei Yoshitomi, Kouhei Toyotaka, Masahiro Katayama, Ryo Hatsumi, Watanabe Kazunori, Hiroki Adachi, Kusunoki Koji, Kawashima Susumu, Tetsuji Ishitani
Publikováno v:
SID Symposium Digest of Technical Papers. 50:512-515
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0298246a75b96f77b5b610cabd02c5fc
https://doi.org/10.1002/sdtp.12969
https://doi.org/10.1002/sdtp.12969
Autor:
Hisao Ikeda, Masayoshi Dobashi, Shingo Eguchi, Masataka Nakada, Shuhei Yoshitomi, Ryo Hatsumi, Masahiro Katayama, Tomoya Aoyama, Takaaki Nagata, Shunpei Yamazaki, Chieko Misawa, Watanabe Kazunori, Hiroki Adachi
Publikováno v:
SID Symposium Digest of Technical Papers. 49:740-743
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dac200cb070611c75fa9a16a37bcd2a7
https://doi.org/10.1002/sdtp.12332
https://doi.org/10.1002/sdtp.12332
Autor:
Yukinori Shima, Shunpei Yamazaki, Kusunoki Koji, Yasuharu Hosaka, Shuhei Yoshitomi, Hideaki Shishido, Ryo Hatsumi, Kenichi Okazaki, Hidenori Mori
Publikováno v:
SID Symposium Digest of Technical Papers. 49:617-620
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08b46bc9799efb497a82c7e6c7f39764
https://doi.org/10.1002/sdtp.12406
https://doi.org/10.1002/sdtp.12406
Autor:
Tetsuji Ishitani, Shuhei Yoshitomi, Shunpei Yamazaki, Masami Jincho, Akio Yamashita, Masahiro Katayama, Ami Sato, Hideaki Shishido, Kawashima Susumu, Satoru Oshita, Yukinori Shima
Publikováno v:
SID Symposium Digest of Technical Papers. 48:242-245
A 4.3-inch 1058-ppi 4K liquid crystal display was fabricated using top-gate field-effect transistors (FETs) comprising a cloud-aligned composite oxide semiconductor. For transparent pixels comprising an oxide semiconductor/oxide conductor (OS/OC), FE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cc960a9f04d537b2642960eebfde960
https://doi.org/10.1002/sdtp.11679
https://doi.org/10.1002/sdtp.11679
Autor:
Daisuke Kubota, Natsumi Matsuo, Shuhei Yoshitomi, Kusunoki Koji, Shunpei Yamazaki, Yuko Oe, Masahiro Katayama, Yasuhiro Niikura, Yoshiharu Hirakata
Publikováno v:
SID Symposium Digest of Technical Papers. 47:473-476
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f2b9d4b017108b3c7ef9262267fcd75
https://doi.org/10.1002/sdtp.10711
https://doi.org/10.1002/sdtp.10711
Publikováno v:
Journal of Electroanalytical Chemistry. 532:247-254
A process of electron-beam patterning of the surface of a Si(111) wafer was developed by utilizing alkyl monolayers as ultrathin patterning media. We performed chemical benchmark tests of the electron-beam patterning of alkyl monolayers on Si(111) in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f7912118f5bfbe602b989b559e2552e
https://doi.org/10.1016/s0022-0728(02)00865-3
https://doi.org/10.1016/s0022-0728(02)00865-3
Autor:
Jun Koyama, Akihiro Chida, Satoshi Seo, Masahiro Katayama, Saki Obana, Shingo Eguchi, Takaaki Nagata, Kenichi Okazaki, Michiko Aizawa, Shunpei Yamazaki, Hiroki Adachi, Masahiko Hayakawa, Tatsuya Okano, Kaoru Hatano, Nozomu Sugisawa, Tatsunori Inoue, Hiroyuki Miyake, Kunihiko Suzuki, Shuhei Yoshitomi, Masayuki Sakakura, Monma Yohei
Publikováno v:
SID Symposium Digest of Technical Papers. 42:498-500
We report a 300mm × 360mm flexible FET substrate made by our transfer technology and 3.4-inch full-color AMOLED display with oxide FET flexible substrate. Our transfer technology has advantages in applicability for a large-size substrate and cost pe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ca6cb3d891e74cc315f14ce95579bad
https://doi.org/10.1889/1.3621366
https://doi.org/10.1889/1.3621366
Publikováno v:
Electrochemistry Communications, Vol 3, Iss 2, Pp 67-72 (2001)
The modification of hydrogen-terminated Si(111) wafer surfaces was reproduced by previously reported methods of the electrolysis of para-substituted benzendiazonium salts and the Grignard reaction with various alkyl moieties. The electrolysis methods
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a40af963b1174235b9c61871bc4539dd
http://www.sciencedirect.com/science/article/pii/S1388248100001508
http://www.sciencedirect.com/science/article/pii/S1388248100001508
Autor:
Shunpei Yamazaki, Daisuke Kawae, Hiroki Ohara, Shuhei Yoshitomi, Akiharu Miyanaga, Hiromichi Godo, Toshinari Sasaki, Masahiro Takahashi, Hideyuki Kishida, Shunichi Ito
Publikováno v:
Japanese Journal of Applied Physics. 49:03CB04
We fabricated an inverted-staggered amorphous In–Ga–Zn-oxide (a-IGZO) thin film transistor (TFT) and measured the temperature dependence of its characteristics. A threshold voltage (V th) shift between 120 and 180 °C was as large as 4 V. In an a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9de4e9e440668aa976933c8e4a520864
https://doi.org/10.1143/jjap.49.03cb04
https://doi.org/10.1143/jjap.49.03cb04
Autor:
Tadashi Serikawa, Shunichi Ito, Shunpei Yamazaki, Yuta Endo, Junichiro Sakata, Shuhei Yoshitomi, Hiroki Ohara, Toshinari Sasaki, Kousei Noda, Miyuki Sasaki
Publikováno v:
Japanese Journal of Applied Physics. 49:03CD02
We have newly developed a 4.0-in. quarter video graphics array (QVGA) active-matrix organic light-emitting diode (AMOLED) display integrated with gate and source driver circuits using amorphous In–Ga–Zn-oxide (IGZO) thin-film transistors (TFTs).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98a847450c9df60c2216aa40c8c1651f
https://doi.org/10.1143/jjap.49.03cd02
https://doi.org/10.1143/jjap.49.03cd02