Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Shuhei Funaki"'
Publikováno v:
Transactions of the Materials Research Society of Japan. 46:33-37
Publikováno v:
TEION KOGAKU (Journal of Cryogenics and Superconductivity Society of Japan). 55:275-279
Publikováno v:
TEION KOGAKU (Journal of Cryogenics and Superconductivity Society of Japan). 54:187-191
Publikováno v:
Thin Solid Films. 657:50-54
The improvement of electrical properties by thermal annealing of Ga-doped ZnO (GZO) films deposited by sputtering has been investigated. The resistivity of a GZO film deposited at room temperature decreases as the vacuum annealing temperature is incr
Autor:
Yuji Tsuchiya, Makoto Takahashi, Shuhei Funaki, Hideo Goto, Akikazu Nanbu, Yutaka Yoshida, Masahiro Tahashi, Hiroyuki Yamada
Publikováno v:
Japanese Journal of Applied Physics. 61:018003
We previously reported that a swollen gel with a uniform composition and prolonged stability can be conveniently prepared by simple ultrasonic irradiation of an ethanol suspension of calcium acetate, which is poorly soluble in ethanol. In this study,
Publikováno v:
Thin Solid Films. 609:25-29
Positional distribution of electrical resistivity and crystalline lattice constant of Ga-doped ZnO films deposited by the magnetron spattering method at room temperature have been investigated. Electrical resistivity and c-axis lattice constant stron
Publikováno v:
IEEE Transactions on Applied Superconductivity. 26:1-4
This paper presents a simple and feasible method for fabricating high-performance REBa 2 Cu 3 O y (RE123) films. Nd123 films were established on a single-crystalline substrate by the KOH flux method at low temperature and ambient pressure. Above 425
Publikováno v:
Thin Solid Films. 707:138069
Ga-doped ZnO (GZO) films inserted with a Zn layer were deposited at room temperature by a sputtering method to decrease carrier-compensating defects. The Zn-inserted GZO films showed a resistivity decrease resulting from an increase in carrier densit
Publikováno v:
Physica C: Superconductivity and its Applications. 512:28-31
Phase formation temperatures of YBa 2 Cu 3 O 7− δ (Y123), YBa 2 Cu 4 O 8 (Y124) and Y 2 Ba 4 Cu 7 O 15 (Y247) in a system containing molten KOH have been studied with respect to partial oxygen pressure. At the low oxygen partial pressure of approx
Publikováno v:
Physics Procedia. 65:125-128
In order to establish the fabrication method of high- T c REBa 2 Cu 3 O y (RE123) films by feasible simple system, we fabricated the RE123 films on SrTiO 3 substrate by molten hydroxide method in low temperature and 1-atm air. Obtain films of RE-123