Zobrazeno 1 - 10
of 53
pro vyhledávání: '"Shuh-Ying Lee"'
Autor:
Shuh-Ying Lee, Soon Fatt Yoon, Satrio Wicaksono, Daosheng Li, Wan Khai Loke, Kian Hua Tan, Robert Harper
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 21:264-269
We demonstrate a top–top contact, dry etched mirror facet III–V waveguide laser diode grown on germanium-on-insulator (GeOI). A 3 x InGaAs/GaAs quantum well designed to lase at 985 nm was grown on a GaAs buffer, which was lattice matched to the G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f13adf573ef9db2557cf9d1ab152d5c2
https://doi.org/10.1109/jstqe.2015.2432022
https://doi.org/10.1109/jstqe.2015.2432022
Autor:
Annie Kumar, Daosheng Li, Gengchiau Liang, Kian Hua Tan, Satrio Wicaksono, Yee-Chia Yeo, Wan Khai Loke, Dimitri A. Antoniadis, Xiao Gong, Sachin Yadav, Soon Fatt Yoon, Shuh-Ying Lee
Publikováno v:
2017 Symposium on VLSI Technology.
We report the first monolithic integration of InGaAs channel transistors with lasers on a Si substrate, achieving a milestone in the direction of enabling low power and high speed opto-electronic integrated circuits (OEICs). The III-V layers for real
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37676aa5b5e9d4890d38454c9a18a76b
https://doi.org/10.23919/vlsit.2017.7998199
https://doi.org/10.23919/vlsit.2017.7998199
Autor:
Shuh-Ying Lee, Sachin Yadav, Xiao Gong, Kian Hua Tan, Dimitri A. Antoniadis, Yuan Dong, Annie Kumar, Yee-Chia Yeo, Kwang Hong Lee, Satrio Wicaksono, Soon Fatt Yoon, Gengchiau Liang, Wan Khai Loke
Lasers monolithically integrated with high speed MOSFETs on the silicon (Si) substrate could be a key to realize low cost, low power, and high speed opto-electronic integrated circuits (OEICs). In this paper, we report the monolithic integration of I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b558a81bd3c9cd6968cb28509f4a9b06
http://hdl.handle.net/10220/47459
http://hdl.handle.net/10220/47459
Autor:
Wei Wang, Wan Khai Loke, Dian Lei, Soon Fatt Yoon, Shengqiang Xu, Xiao Gong, Yee-Chia Yeo, Yuan Dong, Shuh Ying Lee, Gengchiau Liang
Publikováno v:
OFC
We demonstrate a Ge 0.9 Sn 0.1 multiple-quantum-well p-i-n photodiode on Si substrate with a cutoff wavelength beyond 2 μm. A record-low dark current density of 31 mA/cm2 at V bias = −1V is achieved.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce2c3358a0b5d44e92353d632a33283a
https://doi.org/10.1364/ofc.2017.th1a.4
https://doi.org/10.1364/ofc.2017.th1a.4
Autor:
Wei Wang, Soon Fatt Yoon, Shuh Ying Lee, Gengchiau Liang, Yuan Dong, Yee-Chia Yeo, Xiao Gong, Wan Khai Loke
Publikováno v:
2016 IEEE Symposium on VLSI Technology.
We report the world's first demonstration of Germanium-Tin (Ge 1−x Sn x ) heterojunction phototransistor (HPT) for high-efficient low-power light detection in short-wave infrared (SWIR) range. Large optical response enhancement of ∼10 times over
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25ac8d1d4ee18ab97c6af9eec27bd4c3
https://doi.org/10.1109/vlsit.2016.7573449
https://doi.org/10.1109/vlsit.2016.7573449
Autor:
Abu Bakar Mohammad, Mohd Haniff Ibrahim, Mee Koy Chin, N. Mohd Kassim, Shuh Ying Lee, Abu Sahmah Mohd. Supa'at
Publikováno v:
Optical Materials. 32:703-706
In this paper, a characterization process of benzocyclobutene (BCB 4024-40) polymer and its realization into optical devices are described. By using the prism coupling technique, the polymer film thickness for various coating speed and the refractive
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74fdc3ca16590eda944eb53d10082472
https://doi.org/10.1016/j.optmat.2009.04.015
https://doi.org/10.1016/j.optmat.2009.04.015
Publikováno v:
Optics Communications. 273:383-388
A 1310 and 1550 nm coarse wavelength multi/demultiplexer based on benzocyclobutene (BCB 4024-40) polymer is demonstrated for the first time. The device is designed based on a combination of general interference and paired interference mechanisms of m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7c10c939c76eca2a11592de47c972e2
https://doi.org/10.1016/j.optcom.2007.01.006
https://doi.org/10.1016/j.optcom.2007.01.006
Publikováno v:
Microwave and Optical Technology Letters. 49:1024-1028
A novel 1 A— 2 multimode interference (MMI) optical wavelength filter for 1310 and 1550 nm operation based on photodefinable BenzoCyclobutene (BCB 4024-40) polymer is demonstrated. The device is fabricated on BK7 glass substrate with thin layer of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1abf5058b458558abe2ef5bd4f416c3
https://doi.org/10.1002/mop.22327
https://doi.org/10.1002/mop.22327
Autor:
Gengchiau Liang, Dian Lei, Wei Wang, Wan Khai Loke, Soon Fatt Yoon, Xiao Gong, Shuh Ying Lee, Yuan Dong, Yee-Chia Yeo
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
We report the first demonstration of a Ge0.9Sn0.1 multiple quantum wells on Si avalanche photodiode (Ge0.9Sn0.1 MQW/Si APD), achieving a cutoff wavelength λ above 2 μm. This is a major milestone as APDs with cutoff wavelength above 2 μm is traditi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76b5885db2a9e24ea9d0efb4802be1f5
https://doi.org/10.1109/iedm.2015.7409802
https://doi.org/10.1109/iedm.2015.7409802
Autor:
Yuan Dong, Wan Khai Loke, Qian Zhou, Dian Lei, Wei Wang, Gengchiau Liang, Soon Fatt Yoon, Eng Soon Tok, Xiao Gong, Shuh Ying Lee, Yee-Chia Yeo
Publikováno v:
Optics express. 23(14)
We demonstrate that a complementary metal-oxide-semiconductor (CMOS) compatible silicon (Si) surface passivation technique effectively suppress the dark current originating from the mesa sidewall of the Ge(0.95)Sn(0.05) on Si (Ge(0.95)Sn(0.05)/Si) p-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::802e359aed9b640a9906ad1310d12874
https://pubmed.ncbi.nlm.nih.gov/26191919
https://pubmed.ncbi.nlm.nih.gov/26191919