Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Shufeng Ren"'
Publikováno v:
IEEE Access, Vol 8, Pp 31780-31791 (2020)
This paper examines the problem of planning and stabilizing the trajectory of one smooth body rolling on the surface of another. The two control inputs are the angular velocity of the moving body about two orthogonal axes in the contact tangent plane
Externí odkaz:
https://doaj.org/article/3346c10700554bf38e9e8a31368f39fe
Autor:
Xue Wang, Zhonghui An, Jiameng Liao, Nana Ran, Yimeng Zhu, Shufeng Ren, Xiangnan Meng, Na Cui, Yang Yu, Haiyan Fan
Publikováno v:
International Journal of Molecular Sciences; Volume 24; Issue 7; Pages: 6702
Cucumber is a warm climate vegetable that is sensitive to chilling reactions. Chilling can occur at any period of cucumber growth and development and seriously affects the yield and quality of cucumber. Hydrogen (H2) is a type of antioxidant that pla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f4aff2d45f151e158374a566e9083ca4
https://doi.org/10.3390/ijms24076702
https://doi.org/10.3390/ijms24076702
Publikováno v:
Therapeutic Apheresis and Dialysis. 24:695-702
Our aim is to evaluate the safety and efficacy of tunneled dialysis catheter (TDC) exchange through fibrin sheath crevice vs in situ catheter exchange in hemodialysis patients with fibrin-sheath-related catheter dysfunction. Patients with fibrin-shea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8471fc8c02b3f32e2dc667a563596c46
https://doi.org/10.1111/1744-9987.13473
https://doi.org/10.1111/1744-9987.13473
Publikováno v:
Journal of Physics: Conference Series. 2470:012009
Starting from many-body theory, the density profile function of ideal Fermi systems in harmonic and delta traps are obtained under the quantum mechanics and thermodynamic statistical physics, respectively. The related thermodynamic properties are ana
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b93f30956e930b62edb03bb6ffcc2cc
https://doi.org/10.1088/1742-6596/2470/1/012009
https://doi.org/10.1088/1742-6596/2470/1/012009
Autor:
Xin Wan, Mengwei Si, Roy G. Gordon, Peide D. Ye, Kai Ni, Xian Gong, Xiabing Lou, Shufeng Ren, Tso-Ping Ma, Robert A. Reed, Rong Jiang, Maruf A. Bhuiyan, Jingyun Zhang, Daniel M. Fleetwood, En Xia Zhang
Publikováno v:
IEEE Transactions on Nuclear Science. 64:164-169
Epitaxially grown La-based oxide has shown promise as a gate dielectric for GaAs substrate materials with a low interface trap density in the mid to low $10^{11}$ cm $^{\mathrm {-2}}$ eV $^{\mathrm {-1}}$ range. Total ionizing dose (TID) effects have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff8e0ee4236ffbd057ade78865fed967
https://doi.org/10.1109/tns.2016.2620993
https://doi.org/10.1109/tns.2016.2620993
Autor:
Robert A. Reed, Peide D. Ye, En Xia Zhang, Kai Ni, Rong Jiang, Maruf A. Bhuiyan, T. P. Ma, Daniel M. Fleetwood, Heng Wu, Shufeng Ren
Publikováno v:
IEEE Transactions on Nuclear Science. 64:176-180
Total ionizing dose (TID) effects in ultra-thin body Ge on Insulator (GOI) junctionless CMOSFETs with recessed source/drain and channel have been studied. 10-keV X-ray irradiation leads to net hole trapping at the top and bottom Ge/dielectric interfa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c0d3a4c208e8d48eaadd2c2d7e9377b
https://doi.org/10.1109/tns.2016.2624294
https://doi.org/10.1109/tns.2016.2624294
Autor:
Jun Xu, Daniel M. Fleetwood, Dao Guang Liu, Han Liang Bo, En Xia Zhang, Wei Song Zhou, T. P. Ma, Shufeng Ren, Ronald D. Schrimpf, Xin Wan
Publikováno v:
IEEE Transactions on Nuclear Science. 62:2830-2836
Simulations of the SEB hardness of power MOSFETs are carried out with an experimentally calibrated structure. The effects of incorporating high permittivity gate dielectric layers and increasing channel doping concentration are investigated. The simu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c426f18ff4a9d6a22f3f6dd60deb0b7
https://doi.org/10.1109/tns.2015.2498145
https://doi.org/10.1109/tns.2015.2498145
Autor:
Xin Wan, Peide D. Ye, Sharon Cui, Kai Ni, Daniel M. Fleetwood, Robert A. Reed, Sung-Jae Chang, En Xia Zhang, Mengwei Si, Jin Chen, Shufeng Ren, T. P. Ma, Xiao Sun
Publikováno v:
IEEE Transactions on Nuclear Science. 62:2888-2893
InGaAs nanowire (NW) gate-all-around (GAA) MOSFETs exhibit superior radiation hardness compared to planar devices and FinFETs, benefitting from reduced gate-oxide electric fields. Applied gate bias during irradiation, channel thickness, and presence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aedbc2f9aebdd06dbfbb66c29cc37397
https://doi.org/10.1109/tns.2015.2497090
https://doi.org/10.1109/tns.2015.2497090
Autor:
Kai Ni, Tso-Ping Ma, En Xia Zhang, Jing Yun Zhang, Shufeng Ren, Robert A. Reed, Daniel M. Fleetwood, Ling Dong, Andrew L. Sternberg, Ronald D. Schrimpf, Isaak K. Samsel, Peide D. Ye, Michael W. McCurdy
Publikováno v:
IEEE Transactions on Nuclear Science. 62:2752-2759
Charge collection mechanisms are investigated in surface channel GaAs MOSFETs under broadbeam heavy ion irradiation and pulsed two-photon-absorption laser irradiation. The large barrier between the gate dielectric and GaAs eliminates gate conduction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::754fa0a85f5824f0cafcb7b3adc8254f
https://doi.org/10.1109/tns.2015.2495203
https://doi.org/10.1109/tns.2015.2495203
Autor:
Yujing Han, Shufeng Ren
Publikováno v:
Journal of Modern Optics. 57:632-636
We proposed an easy method for probing the wave fronts via a typical Fourier transform system. An amplitude only spatial light modulator (SLM) was set on the front focal plane of a Fourier lens to control the wave front transmittance. A CCD was set o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5426718a5bba5409e84570537ad59f61
https://doi.org/10.1080/09500340.2010.486079
https://doi.org/10.1080/09500340.2010.486079