Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Shucheng Tong"'
Autor:
Xiaolei Wang, Zixuan Shang, Chen Zhang, Jiaqian Kang, Tao Liu, Xueyun Wang, Siliang Chen, Haoliang Liu, Wei Tang, Yu-Jia Zeng, Jianfeng Guo, Zhihai Cheng, Lei Liu, Dong Pan, Shucheng Tong, Bo Wu, Yiyang Xie, Guangcheng Wang, Jinxiang Deng, Tianrui Zhai, Hui-Xiong Deng, Jiawang Hong, Jianhua Zhao
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-8 (2023)
Manipulating electrical and magnetic anisotropies will stimulate multi-terminal device applications. Here, the authors discover axis dependence of current rectifications, magnetic properties and magnon modes in van der Waals multiferroic CuCrP2S6.
Externí odkaz:
https://doaj.org/article/c5db80c85db148b190335b8281c4c58d
Publikováno v:
Nanomaterials, Vol 12, Iss 8, p 1313 (2022)
The transverse magnetoresistance (Rxy) caused by inhomogeneous superconductivity is symmetric about the magnetic field around the critical magnetic field region. This has caused many disturbances during the study of vortex dynamics by Hall signals. H
Externí odkaz:
https://doaj.org/article/2d4d013e7c974749843d855d6e269a8d
Publikováno v:
The Journal of Physical Chemistry Letters. 13:598-605
Autor:
Xiaolei Wang, Zixuan Shang, Chen Zhang, Jiaqian Kang, Tao Liu, Xueyun Wang, Siliang Chen, Haoliang Liu, Wei Tang, Yu-Jia Zeng, Jianfeng Guo, Zhihai Cheng, Lei Liu, Dong Pan, Shucheng Tong, Bo Wu, Yiyang Xie, Guangcheng Wang, Jinxiang Deng, Tianrui Zhai, Hui-Xiong Deng, Jiawang Hong, Jianhua Zhao
Multiferroic materials have great potential in non-volatile devices for low-power and ultra-high density information storage, owing to their unique characteristic of coexisting ferroelectric and ferromagnetic orders. The effective manipulation of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11fc0cb04ee035b1a3abad4cf3abf84e
https://doi.org/10.21203/rs.3.rs-2345805/v1
https://doi.org/10.21203/rs.3.rs-2345805/v1
Autor:
Dongdong Chen, Yaohan Xu, Shucheng Tong, Wenhui Zheng, Yiming Sun, Jun Lu, Na Lei, Dahai Wei, Jianhua Zhao
Publikováno v:
Physical Review Materials. 6
Publikováno v:
Physical Review Applied. 14
Rare-earth-transition-metal (RETM) ferrimagnets have received great attention for their small magnetic moments and fast dynamics in the development of next-generation spintronic devices. Here, we study spin Hall magnetoresistance (SMR) in the RETM fe
Publikováno v:
Physical Review B. 101
The topological material of $\mathrm{C}{\mathrm{o}}_{2}\mathrm{MnGa}$ with potentially high spin polarization has attracted more and more attention, in the fields of fundamental science and spintronic applications. Here we report the electrical- and
Publikováno v:
Applied Physics Letters. 118:252405
Compensated ferrimagnetic materials such as Co–Tb and Co–Gd have been confirmed to have significant spin–orbit torque (SOT) efficiency. However, the large coercivity and a relatively small spin-mixing conductance may hinder the applications of
Publikováno v:
Semiconductor Science and Technology. 36:025002
The effects of Ga composition on the electrical parameters of (Al,Ga)Sb/InAs two-dimensional electron gas have been investigated. The (Al,Ga)Sb/InAs structures are grown on GaAs (001) substrate by molecular-beam epitaxy with various Ga compositions i
Publikováno v:
Journal of Physics D: Applied Physics. 53:18LT04