Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Shubneesh Batra"'
Publikováno v:
Solid-State Electronics. 38:2069-2073
Lightly-doped drain-offset polysilicon thin film transistors (LDO-TFTs) are very attractive as low leakage load elements in CMOS Static Random Access Memory (SRAM) cells. LDO-TFTs with different offset lengths and doses were fabricated and characteri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef4571a283deebceb855076dfd8374e6
https://doi.org/10.1016/0038-1101(95)00076-6
https://doi.org/10.1016/0038-1101(95)00076-6
Publikováno v:
Materials Science and Engineering: B. 32:25-32
The diffusion of boron in polysilicon-on-silicon structures subjected to a rapid thermal anneal (RTA) step in investigated. The high temperature step (> 1000 °C) causes a breakdown of the interfacial oxide leading to increased dopant flux across the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a096e8785202ef57228564607b9ff7cb
https://doi.org/10.1016/0921-5107(94)01156-7
https://doi.org/10.1016/0921-5107(94)01156-7
Autor:
Monte Manning, Shubneesh Batra, Akif Sultan, M. Lobo, Chuck Dennison, S. Bhattacharya, Sanjay K. Banerjee
Publikováno v:
Journal of Electronic Materials. 22:1129-1135
The diffusion of boron in single crystal Si from a BF2-implanted polycrystalline Si film deposited on single crystal Si has been accurately modeled. The effective diffusivities of boron in the single crystal Si substrate have been extracted using Bol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12d64cfd7196172fb337e7e7b0a44894
https://doi.org/10.1007/bf02817536
https://doi.org/10.1007/bf02817536
Autor:
Jack C. Lee, Chuck Dennison, Kyle Picone, Shubneesh Batra, Suryanarayana Bhattacharya, Sanjay K. Banerjee, Monte Manning, Keun Hyung Park
Publikováno v:
Solid-State Electronics. 36:955-960
Heavily implanted polycrystalline Si films are finding increasing applications as solid diffusion sources, for example, in the formation of ultra-shallow junctions in elevated source/drain metal-oxide-semiconductor field effect transistors and polycr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a224c165febaa89fe883df8dcfd291b
https://doi.org/10.1016/0038-1101(93)90110-c
https://doi.org/10.1016/0038-1101(93)90110-c
Autor:
Chuck Dennison, S. Bhattacharya, Nanseng Jeng, Kyle Picone, Akif Sultan, K. Park, Sanjay K. Banerjee, David Kao, Monte Manning, Shubneesh Batra
Publikováno v:
Journal of Electronic Materials. 22:551-554
When dopants are indiffused from a heavily implanted polycrystalline silicon film deposited on a silicon substrate, high thermal budget annealing can cause the interfacial “native” oxide at the polycrystalline silicon-single crystal silicon inter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb373a900c96554ee27891afc36bdc81
https://doi.org/10.1007/bf02661629
https://doi.org/10.1007/bf02661629
Autor:
M. Lobo, Shubneesh Batra, T. C. Smith, Chuck Dennison, J. C. Norberg, B. Mulvaney, Kyusung Park, C. L. Kirschbaum, S. Bhattacharya, Monte Manning, Akif Sultan, G. Lux, Sanjay K. Banerjee
Publikováno v:
Journal of Applied Physics. 73:3800-3804
Boron diffusion in polycrystalline Si‐on‐single crystal Si systems has been studied by secondary ion mass spectrometry. The extrapolated B‐diffusion profiles in polycrystalline Si and in the single crystal Si substrate reveal a discontinuity at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dea0e9e76bde8c459848603c4a2e16a9
https://doi.org/10.1063/1.352886
https://doi.org/10.1063/1.352886
Autor:
J. C. Norberg, B. J. Mulvaney, K. H. Park, Sanjay K. Banerjee, T. C. Smith, Shubneesh Batra, G. Lux, J. K. Elliott, C. L. Kirschbaum
Publikováno v:
Journal of Electronic Materials. 21:227-231
Grain microstructure has a major impact on diffusion of P in polysilicon-on-single crystal silicon systems both within the polysilicon layer and inside the single crystal silicon substrate. During annealing, P diffuses very rapidly along grain bounda
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2dfbad338b54891f60f145ac3b7b3de0
https://doi.org/10.1007/bf02655841
https://doi.org/10.1007/bf02655841
Publikováno v:
Journal of Applied Physics. 70:1397-1404
This paper discusses the diffusion of As, P, and B in amorphous and polycrystalline silicon‐on‐single‐crystal silicon systems during rapid thermal annealing and furnace annealing. It is found that the changes of microstructure during annealing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2760a2279160aa623e4f07b234764eaa
https://doi.org/10.1063/1.349548
https://doi.org/10.1063/1.349548
Publikováno v:
Journal of Electronic Materials. 20:261-265
The inter-dependence of diffusion behavior and grain microstructure in amorphous silicon/polysilicon-on-single crystal silicon systems has been studied for rapid thermal and furnace annealing for P and BF2 implants. It is found that the changes of mi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0b764e5e510e64a89d69d9ff91444ed
https://doi.org/10.1007/bf02651902
https://doi.org/10.1007/bf02651902
Publikováno v:
Journal of The Electrochemical Society. 138:545-549
Comparative studies of As and B diffusion in polysilicon‐on‐single‐crystal silicon systems have been performed by cross‐sectional transmission electron microscopy and secondary ion mass spectrometry. Arsenic and implanted in 300 nm polysilico
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abaa7a759ae5b10e78c20c1eb358c1af
https://doi.org/10.1149/1.2085626
https://doi.org/10.1149/1.2085626