Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Shuangping Han"'
Autor:
Xilong, Liang, Chengbing, Qin, Yan, Gao, Shuangping, Han, Guofeng, Zhang, Ruiyun, Chen, Jianyong, Hu, Liantuan, Xiao, Suotang, Jia
Monolayer transition metal dichalcogenides (TMDs) with strong spin-orbit coupling combined with broken inversion symmetry, leading to a coupling of spin and valley degrees of freedom, make these materials highly interesting for potential spintronics
Externí odkaz:
http://arxiv.org/abs/2009.09565
Autor:
Chengbing, Qin, Xilong, Liang, Shuangping, Han, Guofeng, Zhang, Ruiyun, Chen, Jianyong, Hu, Liantuan, Xiao, Suotang, Jia
Monolayer transition metal dichalcogenides have emerged as promising materials for optoelectronic and nanophotonic devices. However, the low photoluminescence (PL) quantum yield (QY) hinders their various potential applications. Here we engineer and
Externí odkaz:
http://arxiv.org/abs/2009.09563
Autor:
Jiantou Gao, X. Zhang, Shuangping Han, Yurong Bai, H. Zhu, Guodong Xiong, Rui Gu, Gang Guo, Zhengsheng Han, Bo Li, Xiaoting Shan, Fazhan Zhao, Chaohui He, Lei Wang, Xinyu Liu, Chengbing Qin, Jie Liu
Publikováno v:
ACS Photonics. 8:2912-2922
Autor:
Shuangping Han, Yao Li, Ruiyun Chen, Guofeng Zhang, Yonggang Yang, Liantuan Xiao, Suotang Jia, Yunrui Song, Jianyong Hu, Chengbing Qin
Publikováno v:
Physical Review Letters. 127
The interaction between light and metal nanoparticles enables investigations of microscopic phenomena on nanometer length and ultrashort time scales, benefiting from strong confinement and enhancement of the optical field. However, the ultrafast dyna
Autor:
Liantuan Xiao, Yan Gao, Chengbing Qin, Liang Wu, Shanxia Bao, Lele Qi, Shuangping Han, Guofeng Zhang, Xilong Liang, Qiang Wang
Publikováno v:
Carbon Letters. 30:123-132
Carbonaceous materials are considered as potential adsorbents for organic dyes due to their unique structures which provide high aspect ratios, hydrophobic property, large efficient surface area, and easy surface modification. In this work, graphene
Autor:
Xilong, Liang, Chengbing, Qin, Yan, Gao, Shuangping, Han, Guofeng, Zhang, Ruiyun, Chen, Jianyong, Hu, Liantuan, Xiao, Suotang, Jia
Publikováno v:
Nanoscale. 13(19)
Monolayer transition metal dichalcogenides, manifesting strong spin-orbit coupling combined with broken inversion symmetry, lead to coupling of spin and valley degrees of freedom. These unique features make them highly interesting for potential spint
Autor:
Shuangping Han, Sijin Li, Chengbing Qin, Guofeng Zhang, Haitao Zhou, Yaoming Liu, Liantuan Xiao, Suotang Jia, Lei Zhang, Zhifang Wu, Ruiyun Chen
Publikováno v:
Nano letters. 21(3)
Massive magical phenomena in nature are closely related to quantum effects at the microscopic scale. However, the lack of straightforward methods to observe the quantum coherent dynamics in integrated biological systems limits the study of essential
Autor:
Yan Gao, Guofeng Zhang, Xilong Liang, Liantuan Xiao, Shuangping Han, Ruiyun Chen, Suotang Jia, Jianyong Hu, Chengbing Qin
Publikováno v:
Nanoscale.
Monolayer transition metal dichalcogenides, manifesting strong spin–orbit coupling combined with broken inversion symmetry, lead to coupling of spin and valley degrees of freedom. These unique features make them highly interesting for potential spi
Autor:
Chengbing Qin, Guofeng Zhang, Liantuan Xiao, Xilong Liang, Shuangping Han, Suotang Jia, Ruiyun Chen, Jianyong Hu
Monolayer transition metal dichalcogenides have emerged as promising materials for optoelectronic and nanophotonic devices. However, the low photoluminescence (PL) quantum yield (QY) hinders their various potential applications. Here we engineer and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1feea92383302bb0c90b3c0b079e70ae
http://arxiv.org/abs/2009.09563
http://arxiv.org/abs/2009.09563
Autor:
Jianyong Hu, Chengbing Qin, Liantuan Xiao, Guofeng Zhang, Xilong Liang, Yan Gao, Ruiyun Chen, Shuangping Han, Chaoli Yang, Suotang Jia
Publikováno v:
Nanomaterials
Volume 10
Issue 1
Volume 10
Issue 1
Monolayer transition metal dichalcogenides (TMDs) are direct gap semiconductors with promising applications in diverse optoelectronic devices. To improve devices&rsquo
performance, recent investigations have been systematically focused on the tu
performance, recent investigations have been systematically focused on the tu