Zobrazeno 1 - 10
of 94
pro vyhledávání: '"Shuang-Yuan Chen"'
Autor:
Shuang-Yuan Chen, 陳雙源
95
As the MOSFETs shrink into deep submicron and nanometer regimes and most of their operations are unavoidable in high temperature, hot-carrier (HC) induced MOSFET degradation has revealed many phenomena different from the past. Therefore, alth
As the MOSFETs shrink into deep submicron and nanometer regimes and most of their operations are unavoidable in high temperature, hot-carrier (HC) induced MOSFET degradation has revealed many phenomena different from the past. Therefore, alth
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/4n4qkg
Autor:
Mu-Chun Wang, Shun-Ping Sung, Heng-Sheng Huang, Shou-Kong Fan, Shuang-Yuan Chen, Shea-Jue Wang
Publikováno v:
Vacuum. 153:117-121
Exposing the feasible nitrogen concentration and annealing temperatures with decoupled plasma nitridation (DPN) treatment to the high-k dielectric after deposition as gate dielectric is impressive to raise the high-k value and against the gate leakag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::459239f428d1c4f5cc0d1e1070446944
https://doi.org/10.1016/j.vacuum.2018.04.003
https://doi.org/10.1016/j.vacuum.2018.04.003
Autor:
Mu-Chun Wang, Chih-Chieh Chang, Heng-Sheng Huang, Shea-Jue Wang, Chih-Cheng Lu, Shuang-Yuan Chen
Publikováno v:
2019 8th International Symposium on Next Generation Electronics (ISNE).
Mapping technology plus the statistical analysis is a good tool to probe the yield loss of the wafer manufacturing. In this work, the long and short channel devices under the CV measurement with the low and high frequency operation exhibited the inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5860a0aa95f1a8429f580327f84e0ac
https://doi.org/10.1109/isne.2019.8896626
https://doi.org/10.1109/isne.2019.8896626
Autor:
Ching-Chuan Chou, Mu-Chun Wang, Heng-Sheng Huang, L S Huang, Wei-Lun Wang, Ping-Ray Huang, Shuang-Yuan Chen, Shea-Jue Wang
A novel drive current model covering the effects of source/drain voltage (VDS) and gate voltage (VGS) and incorporating drift and diffusion current on the surface channel at the nano-node level, especially beyond 28nm node is presented. The effect of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8570f5eeaae686a36536cc020d3a11c3
https://doi.org/10.20944/preprints201902.0093.v1
https://doi.org/10.20944/preprints201902.0093.v1
Autor:
Shea-Jue Wang, Ping-Ray Huang, Wei-Lun Wang, L S Huang, Heng-Sheng Huang, Shuang-Yuan Chen, Mu-Chun Wang
Publikováno v:
2018 7th International Symposium on Next Generation Electronics (ISNE).
The modulation of equivalent channel mobility μ eq can fit the accurate drain current in high accuracy as the change of horizontal electrical field, related to the drain bias and the channel length with fixed gate bias. The fitting I-V curves contai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f9b8972cd25d1234f6dd9be6d4514bc
https://doi.org/10.1109/isne.2018.8394644
https://doi.org/10.1109/isne.2018.8394644
Publikováno v:
2018 7th International Symposium on Next Generation Electronics (ISNE).
The off-state current of MOSFETs under 28nm-node or beyond seems more important than before to keep the long-time operation for mobile electronic products. In this study, we focus on two parts to expose the off-state current behaviors for 28nm nMOSFE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33c57e6405b4ecee5562ccd59f123b81
https://doi.org/10.1109/isne.2018.8394643
https://doi.org/10.1109/isne.2018.8394643
Autor:
Shuang-Yuan Chen, Shun-Ping Sung, Heng-Sheng Huang, Chih-Chieh Chang, Shea-Jue Wang, Mu-Chun Wang
Publikováno v:
2018 7th International Symposium on Next Generation Electronics (ISNE).
The 28nm hafnium-based gate dielectric with a profile of HfOx/ZrOy/HfOz (HZH) was deposited by atomic layer deposition (ALD) technology. Different nitridation and annealing process conditions on stacked high-k layers were applied to probe the promoti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ca655b6c67f2b77533db8801319ea04
https://doi.org/10.1109/isne.2018.8394625
https://doi.org/10.1109/isne.2018.8394625
Autor:
Mu-Chun Wang, Shuang-Yuan Chen, L S Huang, Chuan-Hsi Liu, Wen-How Lan, Bor-Wen Yang, Shea Jue Wang
Publikováno v:
Microelectronics Reliability. 55:2203-2207
Decoupled plasma nitridation (DPN) or post-deposition annealing (PDA) process after high-k (HK) deposition to repair the bulk traps or the oxygen vacancy in gate dielectric is an impressive choice to raise up the device performance. Before heat stres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9e21d9b37887e2f741abcb17f66e44b
https://doi.org/10.1016/j.microrel.2015.05.016
https://doi.org/10.1016/j.microrel.2015.05.016
Publikováno v:
Journal of Applied Physics; 2014, Vol. 115 Issue 7, p1-8, 8p, 1 Chart, 14 Graphs
Autor:
Ching-Tang Chang, Tzu-Hao Hsieh, Mu-Chun Wang, Shuang-Yuan Chen, Fu-Yuan Tuan, Shun-Ping Sung
Publikováno v:
2017 6th International Symposium on Next Generation Electronics (ISNE).
Exposing the feasible annealing temperature to the high-k dielectric after deposition as gate oxide is very important to increase the capability of dielectric against the leakage and the increase of high-k value. The study does not only focus on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57b51e3e55cff68fe9e3db7ea0f7fd2c
https://doi.org/10.1109/isne.2017.7968710
https://doi.org/10.1109/isne.2017.7968710