Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Shuang-Ying Lei"'
Publikováno v:
Sensors, Vol 9, Iss 4, Pp 2746-2759 (2009)
In order to design and optimize high-sensitivity silicon nanowire-field-effect transistor (SiNW FET) pressure sensors, this paper investigates the effects of channel orientations and the uniaxial stress on the ballistic hole transport properties of a
Externí odkaz:
https://doaj.org/article/5f9e9101aeb64b37ad4cd59e112cecce
Publikováno v:
ACS Omega, Vol 3, Iss 4, Pp 3957-3965 (2018)
Externí odkaz:
https://doaj.org/article/bc2870f033374c23865a0db12787875e
Autor:
Quan Zhang, Cuiyu Li, Shuang-Ying Lei, Shi Hui, Mingyuan Wang, Junpeng Shu, Yonghu Wang, Chen Ruowang, Ming Tian, Neng Wan
Publikováno v:
ACS Applied Nano Materials. 4:11017-11030
Publikováno v:
Scientific Reports, Vol 9, Iss 1, Pp 1-13 (2019)
Scientific Reports
Scientific Reports
Using the first-principles calculation based on density functional theory (DFT), the adsorption properties of nitrogen-based gases molecules (NH3, NO, NO2) on various metal (Li, Na, K, Rb, Cs, Ca, Sr, Ba, Ni, La, Tl) decorated phosphorene systems hav
Publikováno v:
Scientific Reports
Scientific Reports, Vol 11, Iss 1, Pp 1-13 (2021)
Scientific Reports, Vol 11, Iss 1, Pp 1-13 (2021)
Using the first-principles calculation based on density functional theory (DFT), we systematically studied the adsorption of sulfur-based gas molecules (H2S, SO2, SO3) on various metal-decorated phosphorenes. To avoid the formation of metal clusters
Publikováno v:
ACS Omega
ACS Omega, Vol 3, Iss 4, Pp 3957-3965 (2018)
ACS Omega, Vol 3, Iss 4, Pp 3957-3965 (2018)
Using first principle calculations, we have investigated the adsorption of CO gas on various metal-decorated phosphorene. Almost all of the metals were considered to decorate phosphorene. By comparing binding energy (Eb) and cohesive energy (Ec), onl
Publikováno v:
Superlattices and Microstructures. 158:107026
Recently, two-dimensional topological insulators have attracted extensive attention because of their excellent electronic transport performance and easy integration into electronic devices. However, the small bandgap limits their room-temperature app
Publikováno v:
Physics Letters A. 380:3099-3102
Mechanical and piezoresistive properties of bare Si 3 − x /Ge x heterostructure nanowires (HNWs) have been investigated by using first-principles calculations. It is found that Young's modulus of Si 2 /Ge 1 HNW is much smaller than that of other Si
Publikováno v:
Nano Letters. 16:1317-1322
Interface engineering is critical for enriching the electronic and transport properties of two-dimensional materials. Here, we identify a new stacking, named Aδ, in few-layer phosphorenes (FLPs) and black phosphorus (BP) based on first-principles ca
Publikováno v:
RSC advances. 8(26)
Based on high-throughput density functional theory calculations, we investigated the adsorption characteristics of various elements across the Periodic Table on few-layer black phosphorus (BP). Using the criterion that the ratio of adsorption energy