Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Shuairong Deng"'
Autor:
Quanfeng Zhou, Shuairong Deng, Zhanqiang Xing, Kun Zhou, Lifang Liu, Yunfei Gu, Shan Yin, Yinyu Liu, Zhiqiang Li
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 9:4115-4125
Silicon carbide (SiC) gate turn-off (GTO) thyristor is attractive for grid applications due to the excellent performances of high blocking voltage and low ON-resistance. However, the short-circuit reliability issue has become one of the limiting fact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6596497d989d3fa3153867e85bf21efd
https://doi.org/10.1109/jestpe.2021.3061580
https://doi.org/10.1109/jestpe.2021.3061580
Autor:
Yunfei Gu, Zhe Chen, Peng Dong, Yingxin Cui, Kun Zhou, Juntao Li, Shuairong Deng, Le Zhong, Ying Zhang
Publikováno v:
IEEE Transactions on Electron Devices. 66:3910-3915
Silicon carbide (SiC) has shown substantial promise in the fabrication of high-power devices, and SiC Schottky diodes and field-effect transistors (FETs) have been considered as potential candidates for outerspace and sensors applications. Due to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebc70f616f23924756e158492937e84c
https://doi.org/10.1109/ted.2019.2928836
https://doi.org/10.1109/ted.2019.2928836
Publikováno v:
IEEE Transactions on Plasma Science. 46:2979-2984
The trend to move toward the solid-state and repetitive pulsed power supply requires the high-voltage, high-current, and high-speed semiconductor devices, which makes an insulated gate bipolar transistor (IGBT) preferred for this application. However
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::658305da13ef1381a9a4615ba93f5b81
https://doi.org/10.1109/tps.2018.2849778
https://doi.org/10.1109/tps.2018.2849778
Autor:
Shuairong Deng, Lianghui Li, Yunfei Gu, Lin Zhang, Yingxing Cui, Kun Zhou, Juntao Li, Zhiqiang Li
Publikováno v:
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).
In this paper, we investigate the influence of carrier lifetime on SiC GTO and PiN devices for pulsed power application. Both the device characteristics and the circuit dynamic performance in pulsed discharging system are studied based on simulation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a5b0bd6189e784bb86f81cc2611803d
https://doi.org/10.1109/ispsd.2019.8757643
https://doi.org/10.1109/ispsd.2019.8757643
Publikováno v:
2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia).
The propagation delay of probes leads to a significant error in the switching characterization of wide band gap power devices. Alignment of voltage and current ($V-I$) has become essential for the accurate measurement of switching losses. The convent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee4245dd8b10ac693f8e31924b321676
https://doi.org/10.1109/wipdaasia.2018.8734681
https://doi.org/10.1109/wipdaasia.2018.8734681