Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Shuaiqi Fan"'
Autor:
Jiaoyan Dai, Shuaiqi Fan, Chengpeng Liu, Jifeng Li, Jinfu Xu, Shuai Yan, Shimin Wang, Xiang-Xi Ye
Publikováno v:
Journal of Materials Research and Technology, Vol 28, Iss , Pp 3396-3401 (2024)
In this work, the high throughput sample of Cu-0.6Cr-xZr (x = 0–0.18 wt%) alloy was prepared using spark plasma sintering. The influence of Zr concentration on the microstructure and properties of Cu alloys were investigated through advanced charac
Externí odkaz:
https://doaj.org/article/470a45730b34498f86bc3f71a2d2938d
Publikováno v:
Journal of Materials Research and Technology, Vol 27, Iss , Pp 2336-2345 (2023)
In this work, the high throughput sample of Cu-xIn (x = 0–5 wt.%) alloy was prepared by the spark plasma sintering. The effects of In content on the microstructure and properties of Cu alloys were investigated using advanced characterization. The r
Externí odkaz:
https://doaj.org/article/1bd88a4cf5884d0e948cf08b8dfd57e0
Autor:
Shanshan Shen, Yawei Sun, Fei Ren, Jessica M. A. Blair, Pauline Siasat, Shuaiqi Fan, Jianhe Hu, Junping He
Publikováno v:
Frontiers in Veterinary Science, Vol 10 (2023)
IntroductionAntimicrobial peptides (AMPs) play an important role in defending against the attack of pathogenic microorganisms. Among them, the proline-rich antibacterial peptides (PrAMPs) have been attracting close attention due to their simple struc
Externí odkaz:
https://doaj.org/article/af6a97c91dd84ec898b80c7722ff72b3
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 10, Iss 1, Pp 1833-1843 (2019)
A model is proposed to study the diffusion of non-equilibrium minority carriers under the influence of a piezo potential and to calculate the corresponding current–voltage (I–V) characteristics of a piezoelectric p–n junction exposed to mechani
Externí odkaz:
https://doaj.org/article/22c3efc1e6574e83ab89dceb9054e65c
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 9, Iss 1, Pp 1917-1925 (2018)
In piezoelectric semiconductors, electric fields drive carriers into motion/redistribution, and in turn the carrier motion/redistribution has an opposite effect on the electric field itself. Thus, carrier drift in a piezoelectric semiconducting struc
Externí odkaz:
https://doaj.org/article/fb8420c1060a4d0098784306c7c28168
Autor:
Shuaiqi Fan, Ziguang Chen
Publikováno v:
Applied Mathematics and Mechanics. 42:787-804
Recent success in strain engineering has triggered tremendous interest in its study and potential applications in nanodevice design. In this paper, we establish a coupled piezoelectric/semiconducting model for a wurtzite structure ZnO nanofiber under
Publikováno v:
Electrochimica Acta. 423:140570
Publikováno v:
Applied Mathematics and Mechanics. 40:591-600
The performance of a piecewise-stressed ZnO piezoelectric semiconductor nanofiber is studied with the multi-field coupling theory. The fields produced by equal and opposite forces as well as sinusoidally distributed forces are examined. Specific dist
Autor:
Shuaiqi Fan, Ziguang Chen
Publikováno v:
IEEE transactions on ultrasonics, ferroelectrics, and frequency control. 68(5)
The nonlinear governing equations on the coupling between electromechanical fields and charge carrier in a thermal equilibrium piezoelectric pn junction subjected to asymmetric mechanical loads are established in this article. Effect of mechanical lo
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 9, Iss 1, Pp 1917-1925 (2018)
Beilstein Journal of Nanotechnology
Beilstein Journal of Nanotechnology
In piezoelectric semiconductors, electric fields drive carriers into motion/redistribution, and in turn the carrier motion/redistribution has an opposite effect on the electric field itself. Thus, carrier drift in a piezoelectric semiconducting struc