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pro vyhledávání: '"Shuaigong Chen"'
Autor:
Hokmin Ho, Huachun Guo, Allan Zhou, Shuaigong Chen, I. C. Chen, Z.-H. Gan, Jianhua Ju, K. Zheng, Jay Ning, Jinhua Liu, Guiming Wang, Jimmy Wu
Publikováno v:
ECS Transactions. 27:33-38
PMOS poly Si gate blank pre-doping combined with NMOS poly Si counter pre-doping process scheme is demonstrated to keep the benefit of one photolithography saving while no device or product properties degradation.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0558c1fb7f5d84d89094d6dde252bd8
https://doi.org/10.1149/1.3360592
https://doi.org/10.1149/1.3360592
