Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Shu-Tsun Chou"'
Publikováno v:
Thin Solid Films. 544:526-529
In this study, the rare earth erbium oxide (Er 2 O 3 ) was deposited using an electron beam onto an AlGaN/GaN heterostructure to fabricate metal-oxide-semiconductor high-electron-mobility transistors (MOS–HEMTs) that exhibited device performance su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97c61ee4fefd9e5e6570812ff21b0382
https://doi.org/10.1016/j.tsf.2013.01.028
https://doi.org/10.1016/j.tsf.2013.01.028
Autor:
Chien-Fu Shih, Yi-Cherng Ferng, Liann-Be Chang, Ji-Chyun Liu, Sheng-You Liao, Lee Chow, Shu-Tsun Chou, Ming-Jer Jeng, Ching-Chi Lin, Atanu Das
Publikováno v:
Progress In Electromagnetics Research Letters. 33:73-81
An alternative approach for robust electromagnetic pulse (EMP) protection circuit was proposed by using a parallel coupled band-pass fllter (BPF) with high thermal conductivity alumina nitride (AlN) substrate coupled with a traditional gas discharge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8602d6feb573d954c82e5da84df6af56
https://doi.org/10.2528/pierl12041804
https://doi.org/10.2528/pierl12041804
Autor:
Shu-Tsun Chou
Publikováno v:
Journal of Applied Physics. 87:285-288
An abnormal variation of the band-gap energy with temperature was observed in both the (InAs)2.2/(GaAs)2 and (InP)2/(GaP)2 short-period-superlattice (SPS) structures. Strong lateral composition modulation induced two horizontally adjacent regions wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d2a0f9370b1318a0686c09fe64a23bf
https://doi.org/10.1063/1.371857
https://doi.org/10.1063/1.371857
Publikováno v:
Journal of Applied Physics. 83:5394-5398
Two photoluminescence (PL) bands were observed from Si+-implanted SiO2 films after rapid thermal anneal (RTA) at ⩾950 °C. The PL band at 2.2 eV was obtained from the films with RTA in dry nitrogen and the other one at 1.9 eV was obtained from the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c036fb8ebe01e9e030eb67743618294
https://doi.org/10.1063/1.367368
https://doi.org/10.1063/1.367368
Publikováno v:
Journal of Applied Physics. 86:6261-6263
A method for surface passivation using both the phosphorus sulfide/ammonia sulfide [P2S5/(NH4)2Sx] solution and hydrogen fluoride (HF) solution has shown great effectiveness on the barrier height enhancement of Ag/n-GaAs and Ag/n-InP Schottky diodes.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f101354ce557a93cc8d3ff697e7046e4
https://doi.org/10.1063/1.371682
https://doi.org/10.1063/1.371682
Publikováno v:
Applied Physics Letters. 98:222106
Charge trapping, especially electron trapping phenomena in GaN/AlGaN/Gd2O3/Ni–Au metal-oxide-semiconductor structure have been investigated. Owing to crystallization of Gd2O3 film after annealing at 900 °C in ambient air for 30 s, a significant me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f659c0a3888cc2fb16aa7e19d0c54ed6
https://doi.org/10.1063/1.3596382
https://doi.org/10.1063/1.3596382
Publikováno v:
Japanese Journal of Applied Physics. 39:L968
Anomalous variation of photoluminescence (PL) wavelengths with temperature was observed in (InAs)1/(GaP)2 short-period-superlattice (SPS) quantum wells grown by solid-source molecular beam epitaxy with different phosphorus and arsenic cracker tempera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06c02f82424909831dc68c84b5e454b5
https://doi.org/10.1143/jjap.39.l968
https://doi.org/10.1143/jjap.39.l968
Publikováno v:
Japanese Journal of Applied Physics. 39:L819
InGaP grown by solid source molecular beam epitaxy showed lower effective band-gap energy with increasing phosphorus cracker temperature. Anomalous photoluminescence (PL) spectra also indicated that a weaker ordering effect was initiated when the cra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3224763f8aadc4e38f7a1812000376ee
https://doi.org/10.1143/jjap.39.l819
https://doi.org/10.1143/jjap.39.l819
Publikováno v:
Japanese Journal of Applied Physics. 38:17
We have studied the growth mechanism of (InP)2/(GaP)2 short-period superlattices (SPS) and In0.5Ga0.5P quantum wells grown on tilted substrates using solid-source molecular beam epitaxy (SSMBE). Both the (InP)2/(GaP)2 SPS and In0.5Ga0.5P quantum well
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::035babcf75b4e455b370ea1f4403bbd4
https://doi.org/10.1143/jjap.38.17
https://doi.org/10.1143/jjap.38.17
Publikováno v:
Japanese Journal of Applied Physics. 37:4732
Detailed structural and optical studies of ZnCdSe/ZnSe/ZnMgSSe separate confinement heterostructures (SCH) grown on ZnSe, ZnSe/ZnSSe strained-layer superlattices (SLS), and GaAs buffer layers at the II–VI/GaAs interface have been carried out by emp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce9f9c1d9d992f2b49531fd8c0f65879
https://doi.org/10.1143/jjap.37.4732
https://doi.org/10.1143/jjap.37.4732