Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Shu-Ting Chou"'
Autor:
Shu-Ting Chou, 周姝廷
105
Being affected by worldwide market, steel industry becomes the foundation of economic and industrial development. It is always considered as the strength of national characterization. Steel industry is also an index to measure the indicators
Being affected by worldwide market, steel industry becomes the foundation of economic and industrial development. It is always considered as the strength of national characterization. Steel industry is also an index to measure the indicators
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/pqr3m4
Autor:
Shu-Ting Chou, 周淑婷
95
In this thesis, samples with InAs quantum dots (QD) grown on (100) GaAs substrate are investigated. AFM images exhibit the 2.4 ML InAs QDs could appear as two-group size distributions at 480 ~ 520 oC. Also observed is the large-sized relaxed
In this thesis, samples with InAs quantum dots (QD) grown on (100) GaAs substrate are investigated. AFM images exhibit the 2.4 ML InAs QDs could appear as two-group size distributions at 480 ~ 520 oC. Also observed is the large-sized relaxed
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/72253404927572618710
Autor:
Shu-Ting Chou, 周淑婷
91
As MOSFET getting smaller, its silicon dioxide reaches physical limit. To continue its insulation and reasonable interface defects density, now, SiOxNy is the replace material to fill the transition term between SiO2 to high-k material. SiOxN
As MOSFET getting smaller, its silicon dioxide reaches physical limit. To continue its insulation and reasonable interface defects density, now, SiOxNy is the replace material to fill the transition term between SiO2 to high-k material. SiOxN
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/85304512869298410344
Publikováno v:
Developmental & Comparative Immunology. 139:104580
Toll-like receptor signaling is an evolutionarily conserved pathway to induce the expression of immune mediators in response to encounters with pathogens. MyD88 is a central adapter connecting the intracellular domain of the receptors to downstream k
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9f8c4d31a4a406627f2d8ccf7e3cc0e4
https://doi.org/10.1016/j.dci.2022.104580
https://doi.org/10.1016/j.dci.2022.104580
Publikováno v:
Journal of Applied Physics; 3/15/2005, Vol. 97 Issue 6, p064910, 4p, 2 Diagrams, 5 Graphs
Publikováno v:
Infrared Physics & Technology. 52:268-271
The transition mechanisms of a 10-period quantum-dot (QD)/quantum-well (QW) mixed-mode infrared photodetector is investigated in this paper. Both mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) responses are observed for the device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::532926317b1a42902ffdc93bdf81868d
https://doi.org/10.1016/j.infrared.2009.05.007
https://doi.org/10.1016/j.infrared.2009.05.007
Autor:
Meng-Chyi Wu, Bonnie Yu, Shih-Yen Lin, Chi-Che Tseng, Shu-Ting Chou, Wei Lin, Cheng-Nan Chen, Jing-Jong Shyue
Publikováno v:
Thin Solid Films. 517:1799-1802
Thirty-period GaAs/AlGaAs quantum-well infrared photodetector (QWIP) samples with the same device structure prepared by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) are investigated in this paper. Temperature-insen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f3ebe52cceffcec094c31ff2344da47
https://doi.org/10.1016/j.tsf.2008.09.066
https://doi.org/10.1016/j.tsf.2008.09.066
Autor:
Shu-Ting Chou, P.L. Hsu, P. Y. Lim, Fang Yin Lin, Han C. Shih, Yu. V. Pleskov, V. P. Varnin, V. G. Ralchenko, S.F. Hsu
Publikováno v:
Thin Solid Films. 516:6125-6132
The film quality and electrochemical properties of BDD (boron-doped diamond) thin films grown by hot-filament chemical vapor deposition technique on titanium substrates that had been subjected to a range of pre-treatment processes were evaluated. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f36bf2bf201174baeb8d8067ea4c083
https://doi.org/10.1016/j.tsf.2007.11.016
https://doi.org/10.1016/j.tsf.2007.11.016
Publikováno v:
IEEE Transactions on Nanotechnology. 6:589-594
In this paper, we report that low-density InAs/GaAs quantum dots (QDs) can be formed by postgrowth annealing the samples with 1.5-monolayer (ML) InAs coverage, which is thinner than the critical layer thickness for the Stranski-Krastanov growth. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89ee98e3d945204be206b9dc441a7c36
https://doi.org/10.1109/tnano.2007.907847
https://doi.org/10.1109/tnano.2007.907847
Publikováno v:
Journal of Crystal Growth. :817-820
In this paper, 5-pair InAs/GaAs QDIPs with tunable dark current blocking barrier resulting from a p-type doped GaAs layer are fabricated. With a proper choice of the p-type doping density, temperature- insensitive detectivities up to 110 K at low app
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd23d2e13ef04afbe17cbea6edf6f873
https://doi.org/10.1016/j.jcrysgro.2006.11.128
https://doi.org/10.1016/j.jcrysgro.2006.11.128