Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Shu-Kin Lok"'
Autor:
Ying-Hoi Lai, Wai-Yip Cheung, Shu-Kin Lok, George K. L. Wong, Sut-Kam Ho, Kam-Weng Tam, Iam-Keong Sou
Publikováno v:
AIP Advances, Vol 2, Iss 1, Pp 012149-012149-6 (2012)
Studies using in-situ Auger electron spectroscopy and reflection high energy electron diffraction, and ex-situ high resolution X-ray diffraction and electron backscatter diffraction reveal that a MgS thin film grown directly on a GaAs (100) substrate
Externí odkaz:
https://doaj.org/article/bcb68db1b3b840ea84034bb705cd1e22
Publikováno v:
Journal of Electronic Materials. 39:882-892
Nanostructures of II–VI semiconductor materials could potentially offer novel and superior physical (in particular, optoelectronic) properties with respect to their bulk counterparts. Herein, we present our most recent research on several II–VI a
Publikováno v:
Journal of Crystal Growth. 311:2155-2159
A Au/ZnS/Fe-quantum dots (QDs)/ZnS/n+-GaAs(1 0 0) Schottky-barrier structure containing five layers of spherical Fe QDs with diameter around 3 nm was fabricated by the molecular beam epitaxy technique. Its current–voltage (I–V) characteristics me
Autor:
Seung-hoon Han, Jinjin Wang, Sang Yoon Lee, Tianhua Feng, Fu Liu, Zixian Liang, Chi Hou Chan, Kung Bo Ng, Jensen Tsan Hang Li, Shu Kin Lok
Publikováno v:
Scientific Reports
Metamaterials are effectively homogeneous materials that display extraordinary dispersion. Negative index metamaterials, zero index metamaterials and extremely anisotropic metamaterials are just a few examples. Instead of using locally resonating ele
Autor:
George K.L. Wong, Wai-Yip Cheung, Ying Hoi Lai, Shu-Kin Lok, Iam Keong Sou, Kam-Weng Tam, Sut-Kam Ho
Publikováno v:
AIP Advances, Vol 2, Iss 1, Pp 012149-012149-6 (2012)
Studies using in-situ Auger electron spectroscopy and reflection high energy electron diffraction, and ex-situ high resolution X-ray diffraction and electron backscatter diffraction reveal that a MgS thin film grown directly on a GaAs (100) substrate