Výsledky vyhledávání - "Shu-Feng Ren"

Analysis of an improved Lyot depolarizer in terms of the multi-beam superposition treatment

Autor: Wu Fuquan, Shu-feng Ren

Publikováno v: Optoelectronics Letters. 9:246-249

In order to study the depolarization properties of an improved Lyot depolarizer with monochromatic light, the theory of multi-beam superposition is adopted. The dependences of degree of depolarization (D) on vibration azimuth angle (VAA) and total re

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9967f1ffafd11ce6a910481b4da3a6af
https://doi.org/10.1007/s11801-013-2423-x

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Carrier transport characteristics of strained N-MOSFET featuring channel proximate silicon-carbon source/drain stressors for performance boost

Autor: Shu-Feng Ren, Ganesh S. Samudra, Chee-Mang Ng, Yee-Chia Yeo, Shao-Ming Koh, Peng Zhang

Publikováno v: 2010 Proceedings of the European Solid State Device Research Conference.

We report a study of carrier transport in strained n-channel MOSFETs (nFETs) with embedded silicon-carbon (Si:C) source/drain (S/D) stressors formed in close proximity to the channel, taking parasitic resistance into account in the extraction of carr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9c382da77681897313e843dea17cec55
https://doi.org/10.1109/essderc.2010.5618195

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Conference

Carrier transport characteristics of strained N-MOSFET featuring channel proximate silicon-carbon source/drain stressors for performance boost.

Autor: Shao-Ming Koh, Peng Zhang, Shu-Feng Ren, Chee-Mang Ng, Samudra, G.S., Yee-Chia Yeo

Publikováno v: 2010 Proceedings of the European Solid-State Device Research Conference (ESSDERC); 2010, p412-415, 4p

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