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Publikováno v:
Materials Science Forum. 954:163-169
Silicon carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) has become the core device of power-switching converters with its excellent characteristics. An accurate and simple model of medium voltage SiC MOSFET is necessary for d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a00be929004504ed974876a5d227e138
https://doi.org/10.4028/www.scientific.net/msf.954.163
https://doi.org/10.4028/www.scientific.net/msf.954.163
