Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Shu Liang Lin"'
Autor:
Ping Yu Kuei, Ching Chi Lin, Shu Liang Lin, Atanu Das, Nan Hung Cheng, Yi Cherng Ferng, L. B. Chang, Yung-Fang Chen
Publikováno v:
IEEJ Transactions on Electrical and Electronic Engineering. 14:1091-1094
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1ef8aa074d5010f5e93d6385002d6cb
https://doi.org/10.1002/tee.22904
https://doi.org/10.1002/tee.22904
Autor:
Shu-Liang Lin, 林述良
106
Instead of cash, the people in China only bring smart phone to go shopping. In 2016 lpsos survey, the proportion of mobile payments reached 76%. However, there are only 39.7% people have used mobile payment in Taiwan and most of them are sti
Instead of cash, the people in China only bring smart phone to go shopping. In 2016 lpsos survey, the proportion of mobile payments reached 76%. However, there are only 39.7% people have used mobile payment in Taiwan and most of them are sti
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/24xym6
Autor:
Shu-liang Lin, 林淑亮
100
The purpose of the thesis is to study the PRC’s Taiwan policies during the Chen Shui-Bian government and Ma Ying-Jeou Government. Theoretically, by adopting the rational actor model and soft power theory, this study tries to analyze and co
The purpose of the thesis is to study the PRC’s Taiwan policies during the Chen Shui-Bian government and Ma Ying-Jeou Government. Theoretically, by adopting the rational actor model and soft power theory, this study tries to analyze and co
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/76264169122905775410
Autor:
Shu Liang Lin, 林書良
98
AlGaN/GaN heterostructure high electron mobility transistors (HEMTs) have great potential in high frequency and high power application. But when AlGaN/GaN HEMTs operate at high power condition, the excess heat of the HEMT devices will to limi
AlGaN/GaN heterostructure high electron mobility transistors (HEMTs) have great potential in high frequency and high power application. But when AlGaN/GaN HEMTs operate at high power condition, the excess heat of the HEMT devices will to limi
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/89316303191836164741
Autor:
Kang, Rui-Hua1 (AUTHOR), Liang, Shu-Jia2 (AUTHOR), Ma, Yan-Ling3 (AUTHOR), Liang, Shu4 (AUTHOR), Xiao, Lin5 (AUTHOR), Zhang, Xin-Hui6 (AUTHOR), Lu, Hong-Yan7 (AUTHOR), Xu, Xiao-Qin8 (AUTHOR), Luo, Shui-Bin9 (AUTHOR), Sun, Xiao-Guang10 (AUTHOR), Chen, Lin11 (AUTHOR), He, Jian-Mei12 (AUTHOR), Wu, Guo-Hui13 (AUTHOR), Liao, Ling-Jie1,2 (AUTHOR), Xing, Hui1,2 (AUTHOR), Shao, Yi-Ming1,2 (AUTHOR) yshao@bjmu.edu.cn, Ruan, Yu-Hua1 (AUTHOR) ruanyuhua92@163.com
Publikováno v:
Infectious Diseases of Poverty. 5/24/2020, Vol. 9 Issue 1, p1-9. 9p.
Autor:
KРИВОШЕЈЕВ, ВЛАДИМИР
Publikováno v:
Proceedings of Matica Srpska for History / Zbornik Matice Srpske za Istoriju; 2023, Issue 2, p221-232, 12p
Autor:
Cheng, Nan‐Hung, Chen, Yung‐Fang, Chang, Liann‐Be, Kuei, Ping‐Yu, Ferng, Yi‐Cherng, Das, Atanu, Lin, Shu‐Liang, Lin, Ching‐Chi
Publikováno v:
IEEJ Transactions on Electrical & Electronic Engineering; Jul2019, Vol. 14 Issue 7, p1091-1094, 4p
Autor:
Kuei, Ping-Yu, Cheng, Nan-Hung, Chen, Yung-Fang, Ferng, Yi-Cherng, Das, Atanu, Lin, Shu-Liang, Lin, Ching-Chi, Chang, Liann-Be
Publikováno v:
2014 International Symposium on Electromagnetic Compatibility, Tokyo; 2014, p721-724, 4p
Autor:
Luo, He-Chun, Shen, Yu-Cun, Meng, Fan-Qiang, Jia, Yun-Kui, Zhao, Xue-Ying, Guo, Hua, Feng, Xiu-Qin
Publikováno v:
Chinese Journal of Integrated Traditional & Western Medicine; 1996, Vol. 2 Issue 2, p98-100, 3p