Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Shu Jenn Yu"'
Publikováno v:
Journal of the Chinese Institute of Engineers. 32:391-396
X‐band gain amplifiers, consisting of a symmetrically‐graded‐channel In0 425 Al0.575As/InxGa1 –xAs (x = 0.5 ?> 0.65 —? 0.5) metamorphic high electron mobility transistor (SGC‐MHEMT) and a pseudomorphic‐channel In0 425Al0 575As/In0 65Ga0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3b7336d75f86b62a596db25ab9d9f3e
https://doi.org/10.1080/02533839.2009.9671519
https://doi.org/10.1080/02533839.2009.9671519
Publikováno v:
Microwave and Optical Technology Letters. 50:2135-2138
A 26–38 GHz millimeter-wave (MMW) band sub-harmonic mixer has been designed using a 0.15-μm GaAs pseudomorphic high-electron-mobility transistor (pHEMT) technology. The anti-parallel diode pair (APDP) configuration as the basic unit in this sub-ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::262f27dc287b4288e57804dcb6efc3a7
https://doi.org/10.1002/mop.23595
https://doi.org/10.1002/mop.23595
A flat gain/power responses 618 GHz power amplifier MMIC with high PAE by using transformer networks
Autor:
Ching-Hsueh Chang, Shu-Jenn Yu, Chian-Sern Chang, Wei-Chou Hsu, Chang-Luen Wu, Ching-Sung Lee
Publikováno v:
Microwave and Optical Technology Letters. 50:205-208
A two-stage power amplifier monolithic microwave integrated-circuit, operating between 6 and 18 GHz by implementing AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors is presented. This devised power amplifier has demonstrated flat g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3223dc5701783608c8d77cac7275adc
https://doi.org/10.1002/mop.23033
https://doi.org/10.1002/mop.23033
Autor:
Wei-Chou Hsu, Ching-Sung Lee, Shu-Jenn Yu, Chian-Sern Chang, Ching-Hsueh Chang, Chang-Luen Wu
Publikováno v:
Microwave and Optical Technology Letters. 49:1637-1641
A three-stage monolithic microwave integrated-circuit (MMIC) low-noise amplifier (LNA) design with superiorly low thermal-sensitivity coefficients in both the small-signal gain and noise figure characteristics is reported. The amplifier is constitute
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e9bf9b1470d4d8627c51ddc7d9aeaed
https://doi.org/10.1002/mop.22543
https://doi.org/10.1002/mop.22543
Publikováno v:
Solid-State Electronics. 50:291-296
δ-Doped In0.35Al0.65As/In0.35Ga0.65As metamorphic high electron mobility transistor (MHEMT) grown by molecular beam epitaxy (MBE) has been successfully investigated. High power characteristic are achieved due to the improved impact ionization and ki
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0d4693be6c0124032f15e4a6b38cc40
https://doi.org/10.1016/j.sse.2005.12.003
https://doi.org/10.1016/j.sse.2005.12.003
Autor:
Shu-Jenn Yu, 余書振
96
This dissertation presents new designs of Monolithic Microwave Integrated Circuits (MMICs), including sub-harmonic mixer, low-noise amplifier, and high-power amplifier. Besides, in order to improve the device performance suitable for MMIC imp
This dissertation presents new designs of Monolithic Microwave Integrated Circuits (MMICs), including sub-harmonic mixer, low-noise amplifier, and high-power amplifier. Besides, in order to improve the device performance suitable for MMIC imp
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/72039031680753027147
Publikováno v:
The Fourth International Workshop on Junction Technology, 2004. IWJT '04..
In order to enhance the electron mobility we use step graded channel structure in the heterostructure field effect transistor to reduce Coulomb scattering. The electrons are far away from the AlGaAs/InGaAs interface. We fabricated successfully and ob
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6865f0c73bbd5693fa5ae7bc52f68ad7
https://doi.org/10.1109/iwjt.2004.1306796
https://doi.org/10.1109/iwjt.2004.1306796
Autor:
Shu-Jenn Yu, 余書振
91
In this thesis, the high electron mobility transistors (HEMT’s) with step-composition channel grown by metalorganic chemical vapor deposition (MOCVD) have been studied. The improvement can be expected by using a novel channel structure. By
In this thesis, the high electron mobility transistors (HEMT’s) with step-composition channel grown by metalorganic chemical vapor deposition (MOCVD) have been studied. The improvement can be expected by using a novel channel structure. By
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/34606639069130812908
Publikováno v:
Japanese Journal of Applied Physics. 43:5942
A heterostructure field-effect transistor with a step-graded channel has been successfully fabricated. The conduction electrons are distant from the AlGaAs/InGaAs interface; thus the Coulomb scattering is reduced, and consequently, electron mobility
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::129c9ec55a96ec744988265e0cf7430b
https://doi.org/10.1143/jjap.43.5942
https://doi.org/10.1143/jjap.43.5942
Publikováno v:
Microwave & Optical Technology Letters; Aug2008, Vol. 50 Issue 8, p2135-2138, 4p, 1 Color Photograph, 1 Diagram, 1 Chart, 5 Graphs